KTC1006-AT/P

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B FEATURES D ᴌRecommended for Driver Stage Application of A AM 4W Transmitter. ᴌHigh Power Gain. P DEPTH:0.2 ᴌWide Area of Safe Operation. C G S Q R J K F SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER RATING 80 UNIT 80 V 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Colletor Power Dissipation PC 1 W Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range H E M V VEBO Emitter-Base Voltage H 1 O CHARACTERISTIC F N 2 H M 3 H L D MAXIMUM RATINGS (Ta=25ᴱ) DIM A B C D MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S N 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 Ọ A Collector Cut-off Current ICER VCE=80V, RBE=220ή - - 0.1 Ọ A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 Ọ A DC Current Gain hFE VCE=2V, IC=150mA 100 - - VCE(sat) IC=500mA, IB=20mA - - 0.7 V Base-Emitter Voltage VBE VCE=2V, IC=500mA - 0.9 - V Transition Frequency fT VCE=10V, IC=100mA - 150 - MHz VCB=10V, IE=0, f=1MHz - 12 - pF Collector-Emitter Saturation Voltage Collector Output Capacitance 1994. 5. 20 Revision No : 0 Cob 1/2 KTC1006 h FE - I C 2k 1k COMMON EMITTER Ta=25 C 1k DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE 6mA 800 5mA 4mA 600 3mA 400 2mA I B=1mA 200 0 0 2 1 3 4 5 6 COMMON EMITTER VCE =2V Ta=25 C 500 300 100 20 20 0.01 7 0.03 COMMON EMITTER I C /I B =25 Ta=25 C 0.1 0.05 0.03 0.01 0.01 0.03 0.1 0.3 1 2 COMMON EMITTER VCE =10V Ta=25 C 500 300 100 50 30 10 0.01 COMMON EMITTER f=1MHz Ta=25 C 100 50 30 10 5 3 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) 1994. 5. 20 Revision No : 0 200 COLLECTOR POWER DISSIPATION P C (W) OUTPUT CAPACITANCE Cob (pF) 300 0.03 0.1 0.3 1 COLLECTOR CURRENT I C (A) C ob - VCB 1 2 1k COLLECTOR CURRENT I C (A) 1 1 fT - I C 1 TRANSITION FREQUENCY f T (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) V CE(sat) - I C 0.3 0.3 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE VCE (V) 0.5 0.1 Pc - Ta 3 NO HEAT SINK 1 0.8 0.5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2