KTC1027-Y-AT/P

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B FEATURE D A ᴌComplementary to KTA1023. P DEPTH:0.2 C Q RATING UNIT Collector-Base Voltage VCBO 120 V Collector-Emitter Voltage VCEO 120 V Emitter-Base Voltage VEBO 5 V Collector Current IC 800 mA Emitter Current IE -800 mA Collector Power Dissipation PC 1 W Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ K R SYMBOL J CHA RACTERISTIC S G MAXIMUM RATING (Ta=25ᴱ) Storage Temperature Range F F H H E O 1 N 2 H M 3 H L D M DIM A B C D MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX E F G H J K L M 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 0.50 14.00 + 0.35 MIN _ 0.10 0.75 + 4 N O 25 1.25 Φ1.50 0.10 MAX _ 0.50 12.50 + 1.00 P Q R S N 1. EMITTER 2. COLLECTOR 3. BASE TO-92L ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V hFE (Note) VCE=5V, IC=100mA 80 - 240 VCE(sat) IC=500mA, IB=50mA - - 1.0 V Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz VCB=10V, IE=0, f=1MHz - - 30 pF DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 1994. 12. 20 O:80ᴕ160, Y:120ᴕ240 Revision No : 0 1/2 KTC1027 h FE - I C I C - VCE 300 COMMON EMITTER Ta=25 C 15mA 800 DC CURRENT GAIN hFE 7mA 10mA 5mA 600 4mA 3mA 400 2mA 200 I B =1mA 0mA 0 2 4 6 50 30 COMMON EMITTER VCE =5V 10 10 8 Ta=-25 C 100 3 12 5 10 0.3 Ta=100 C Ta=25 C 0.1 0.05 Ta=-25 C 0.03 COMMON EMITTER V CE =5V 600 400 200 0 0 5 10 30 50 100 300 1k 0 0.2 2.0 1.5 2 0.5 20 40 60 80 100 120 140 AMBIENT TEMPERATURE Ta ( C) 160 I C MAX. (PULSED) I C MAX. (CONTINUOUS) 1k 500 DC OP Tc ER =2 AT 5 I C ON 300 100 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 50 20 SINGLE NONREPETITIVE PULSE Ta=25 C s 1m s 10m ms 100 2.5 COLLECTOR CURRENT I C (mA) 3k 1 Tc=Ta 2 Ta=25 C 1 0 10 SAFE OPERATING AREA 3.5 1.0 0.8 BASE-EMITTER VOLTAGE VBE (V) Pc - Ta 3.0 0.6 0.4 3 5 10 VCEO MAX. 0.5 5 C COMMON EMITTER I C /I B=10 Ta=1 00 C COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 800 1 COLLECTOR CURRENT I C (mA) COLLECTOR POWER DISSIPATION PC (W) 1k I C - VBE VCE(sat) - I C 0 300 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 0.01 100 30 Ta=-25 C 0 Ta=100 C Ta=25 C Ta=2 COLLECTOR CURRENT I C (mA) 1k 30 50 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 1994. 12. 20 Revision No : 0 2/2