KTC1804L

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. APPLICATION Relay drivers, high-speed inverters, converters, and other general high-current switching applications. A C KTC1804D/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES Low Collector Emitter Saturation Voltage. : VCE(sat)=0.4V(Max.) (IC=4A) High Current and High fT : IC=8A, fT=180MHz. Excellent Linearity of hFE High Speed Switching Time. : fT=20nS (Typ.) Complementary to KTA1204D/L 1. BASE 2. COLLECTOR 3. EMITTER 1 H F 2 F 3 P L DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M Q D MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltag Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 60 60 6 8 12 1.0 20 150 -55 150 F F L UNIT V V V A A C DPAK I J D O K W H G P 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.0 + 0.2 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q 1. BASE 2. COLLECTOR 3. EMITTER E B IPAK 2003. 3. 27 Revision No : 2 1/4 KTC1804D/L ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-base Breakdown Voltage Gain-Bandwidth Product Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO fT Cob ton tstg tf IB1 TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=6A IC=4A, IB=0.2A IC=4A, IB=0.2A IC=10 A, IE=0 IC=1mA, RBE= IE=10 A, IC=0 VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz 20µsec INPUT IB2 DUTY CYCLE < 1% = IB1=-I B2 =0.4A OUTPUT 6.25Ω I B1 I B2 MIN. 100 35 60 50 6 - TYP. 200 0.95 MAX. 1 1 400 400 1.3 UNIT A A mV mV V V 180 65 50 500 20 - V MHz pF nS VCC =25V Note : hFE Classification O:100~200, Y:140~280, GR:200~400. 2003. 3. 27 Revision No : 2 2/4 KTC1804D/L I C - V CE 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) 8 6 4 2 0 A 90m I C - V CE 5 A 80m 70mA 60mA 50mA 40mA 30mA 30mA 25mA 100 mA 4 3 2 1 0 20mA 15mA 20mA 10mA I B =0mA 10mA 5mA I B =0mA 0 0.4 0.8 1.2 1.6 2.0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - V BE 8 COLLECTOR CURRENT IC (A) 7 6 5 Ta= 75 C Ta= 25 C Ta=25 C VCE =2V h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=75 C Ta=25 C Ta=-25 C VCE =2V 4 3 2 1 0 0 0.2 0.4 0.6 100 50 30 0.8 1.0 1.2 10 0.01 0.03 0.1 0.3 1 3 10 20 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (mA) fT - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 500 300 VCE =5V C ob - VCB 500 300 f=1MHz 100 50 30 100 50 30 10 0.02 0.05 0.1 0.3 0.5 1 3 5 10 1 3 5 10 30 50 100 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR CURRENT I C (mA) 2003. 3. 27 Revision No : 2 3/4 KTC1804D/L VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 VBE(sat) - I C 5 3 I C /I B =20 1 0.5 0.3 Ta=-25 C Ta=25 C 100 50 30 5 5 C a=-2 =7 T Ta C 25 Ta= C Ta=75 C 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT IC (A) SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 I C (Pulse)MAX. * I C (DC)MAX. 1m 0m 10m S* S* S * O Tc PE =2 RA 5 TI C ON 10 Pc - Ta COLLECTOR POWER DISSIPATION P C (W) 24 20 16 12 8 4 0 20 DC DC OP ER AT IO Tc N =2 5 Ta C =2 5 C * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WIHT INCREASE IN TEMPERATURE. Ta=25 C 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 10 30 100 0.1 0.3 1 3 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 3. 27 Revision No : 2 4/4