KTC2020D-Y-RTF/P

SEMICONDUCTOR KTC2020D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES ・Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. ・Straight Lead (IPAK, "L" Suffix) ・Complementary to KTA1040D/L. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 60 V Emitter-Base Voltage VEBO 7 V Collector Current IC 3 A Base Current IB 0.5 A Collector Power Ta=25℃ Dissipation Tc=25℃ 1.0 PC Junction Temperature Storage Temperature Range W 20 Tj 150 ℃ Tstg -55～150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 100 μA Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 100 V(BR)CEO IC=50mA, IB=0 60 - - μA V VCE=5V, IC=0.5A 100 - 300 - Collector-Emitter Breakdown Voltage hFE (Note) DC Current Gain VCE(sat) Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency 0.5 1.0 V - 0.7 1.0 V fT VCE=5V, IC=0.5A - 30 - MHz VCB=10V, IE=0, f=1MHz - 35 - pF Turn-on Time ton - 0.65 - Storage Time tstg - 1.3 - Fall Time tf - 0.65 - Note : hFE Classification 2003. 3. 27 - VCE=5V, IC=0.5A Cob Collector Output Capacitance Switching Time IC=2A, IB=0.2A VBE Y:100~200, μS GR:150~300. Revision No : 5 1/2 KTC2020D 2003. 3. 27 Revision No : 5 2/2