KTC2020D

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. DPAK FOR SVRFACE MOUNT APPLICATIONS. A KTC2020D/L EPITAXIAL PLANAR NPN TRANSISTOR I J FEATURES Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L. Q C H F 1 2 F 3 P L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 60 7 3 0.5 1.0 20 150 -55 150 UNIT V V V A A W Q DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK A C I J D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 0.2 5.0 + _ 1.10 + 0.2 _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 0.2 2.0 + _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX K 1. BASE 2. COLLECTOR 3. EMITTER E B ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification 2003. 3. 27 Y:100~200, ) TEST CONDITION VCB=60V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=5V, IC=0.5A IC=2A, IB=0.2A VCE=5V, IC=0.5A VCE=5V, IC=0.5A VCB=10V, IE=0, f=1MHz 20µsec IB1 INPUT IB2 IB1=-I B2 =0.2A DUTY CYCLE < 1% = OUTPUT I B1 I B2 15Ω IPAK SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) VBE fT Cob ton tstg tf GR:150~300. MIN. 60 100 - TYP. 0.5 0.7 30 35 0.65 1.3 0.65 MAX. 100 100 300 1.0 1.0 - UNIT A A V V V MHz pF S VCC =30V Revision No : 5 1/2 KTC2020D/L I C - V CE COLLECTOR POWER DISSIPATION P C (W) COLLECTOR CURRENT I C (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 I B =10mA 90 80 70 60 50 40 30 20 Pc - Ta 32 28 24 20 16 12 8 4 0 0 25 Ta=25 C Tc =2 5 C COMMON EMITTER Tc=25 C 0 1 2 3 4 5 6 7 8 50 75 100 125 150 175 200 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) h FE - I C 300 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) Tc=100 C C Tc=25 C Tc=-25 SAFE OPERATING AREA 10 I C MAX(PULSED)* 5 3 I C MAX (CONTINUOUS) 1m * mS 10 S* N IO 0m 10 AT ER 5 C OP c=2 DC T 100 50 30 S* 1 0.5 0.3 10 0.02 0.05 0.1 0.3 1 3 10 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE COLLECTOR CURRENT IC (A) 0.1 1 3 5 10 30 50 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COMMON EMITTER I C /I B =10 0.1 0.05 0.03 0.02 0.05 0.1 100 Tc= C Tc=25 C Tc=-25 C 0.3 1 3 5 10 COLLECTOR CURRENT I C (A) 2003. 3. 27 Revision No : 5 VCEO MAX. COMMON EMITTER VCE =5V * SINGLE NONREPETITIVE PULSE Tc=25 C 100 2/2