KTC2022D

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). Complementary to KTA1042D/L. Q A C KTC2022D/L EPITAXIAL PLANAR NPN TRANSISTOR I J H P F F 2 3 L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 5 0.5 20 150 -55 150 UNIT V V V A A W 1 DIM A B C D E F H I J K L M O P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 1.10 + 0.2 _ 2.70 + 0.2 _ 2.30 + 0.1 1.00 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ 2.00 + 0.20 _ 0.50 + 0.10 _ 0.91+ 0.10 _ 0.90 + 0.1 _ 1.00 + 0.10 0.95 MAX B K E M D 1. BASE 2. COLLECTOR 3. EMITTER DPAK Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range A C I J D O H G P F F L 1 2 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 6.60 + 0.2 _ 6.10 + 0.2 _ 5.0 + 0.2 _ 0.2 1.10 + _ 9.50 + 0.6 _ 2.30 + 0.1 _ 0.76 + 0.1 1.0 MAX _ 2.30 + 0.2 _ 0.5 + 0.1 _ + 0.2 2.0 _ 0.50 + 0.1 _ 1.0 + 0.1 0.90 MAX Q K 1. BASE 2. COLLECTOR 3. EMITTER E B IPAK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification 0:70~140, ) TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=0.4A VCE=5V, IC=1A VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz MIN. 100 70 20 TYP. 30 40 MAX. 100 1.0 240 2.0 1.5 V V MHz pF UNIT A mA V ICBO IEBO V(BR)CEO SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob Y:120~240. 2003. 3. 27 Revision No : 4 1/2 KTC2022D/L I C - VCE 5.0 COLLECTOR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 30 0 25 0 VCE(sat) - I C 150 100 200 2 1 0.5 0.3 COMMON EMITTER I C /I B =10 50 I B =20mA COMMON EMITTER Tc=25 C 0 Tc=25 C 0.1 0.05 0.03 0.01 0.03 0.1 0.3 Tc=-25 C 0 1.0 2.0 3.0 4.0 5.0 6.0 1 Tc =7 5 C 3 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) h FE - I C 500 DC CURRENT GAIN h FE COLLECTOR CURRENT I C (A) 300 Tc=75 C Tc=25 C Tc=-25 C SAFE OPERATING AREA 20 10 5 3 I C MAX.(PULSED) * I C MAX. (CONTINUOUS) S* 1m * mS 10 S * 0m 10 100 50 30 DC 1 0.5 0.3 O Tc PE =2 RA 5 TI C ON 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) 0.1 2 5 10 30 100 VCEO MAX. COMMON EMITTER VCE =5V * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 300 COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 24 20 16 12 8 4 2 1 1 Tc=25 C 2 Ta=25 C 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 4 2/2