SEMICONDUCTOR
TECHNICAL DATA
LED DRIVE APPLICATION FEATURES
・Adoption of MBIT processes. ・Low collector-to-emitter saturation voltage. ・Fast switching speed.
A C
KTC2825D
EPITAXIAL PLANAR NPN TRANSISTOR
H J
M
N G F F 2 3 K L
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25℃ TC=25℃ SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg RATING 60 60 6 3 6 600 1 15 150 -55~150 UNIT V V V A A mA W W ℃ ℃
1
DIM A B C D E F G H J K L M N
MILLIMETERS _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.0 + 0.2 _ 1.1 + 0.2 _ 2.7 + 0.2 _ 2.3 + 0.1 1.0 MAX _ 2.3 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 _ 0.5 + 0.1 0.95 MAX _ 0.9 + 0.1
1. BASE 2. COLLECTOR 3. EMITTER
E
B
D
DPAK
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL ICBO IEBO hFE(1) hFE (2) VCE(sat) (1) VCE(sat) (2) VBE(sat) Cob ton tstg TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100㎃ VCE=2V, IC=3A IC=2A, IB=100㎃ IC=360㎃, IB=2㎃ IC=2A, IB=100㎃ VCB=10V, f=1㎒, IE=0
PW=20µs DC < 1% = INPUT I B1 R8 I B2 25
MIN. 200 35 -
TYP. 0.19 0.94 25 35
MAX. 1 1 400 0.5
UNIT. ㎂ ㎂
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-on Time Switching Time
V 0.3 1.2 V ㎊
Storage Time
VR 50
100µ 470µ 25V
470
-
nS
Fall Time
tf
-5V 10IB1=-10I B2 =I C =1A
-
90
-
2010. 11. 11
Revision No : 1
1/3
KTC2825D
I C - V CE
5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 COLLECTOR CURRENT I C (A)
100mA 80mA 60mA 40mA 20mA 10mA 5mA
I C - V BE
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2
Ta=7 5C 25 -25 C C
VCE =2V
I B =0
0
0.4
0.8
1.2
1.6
2.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
BASE EMITTER VOLTAGE V BE (V)
I C - V CE
2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16
8mA
h FE - I C
1k DC CURRENT GAIN h FE 500 300
VCE =2V
7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0
100 50 30
18
20
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (A)
V BE(sat) - I C
BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V)
I C /I B =20
V CE(sat) - I C
COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300
I C /I B =20
10 5 3
1 0.5 0.3
Ta=25 C
Ta=-25 C Ta=75 C
100 50 30
Ta=-25 C Ta=75 C Ta=25 C
0.1 0.01
0.03
0.1
0.3
1
3
10
10 0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
2010. 11. 11
Revision No : 1
2/3
KTC2825D
OUTPUW CAPACITANCE C ob (pF)
100 50 30
COLLECTOR POWER DISSIPATION PC (W)
C ob - V CB
f=1MHz
PC - TC
20
15
10 5 3
10 5 1 0 25 50 75 100 125 150
1
1
3
5
10
30
50
100
200
COLLECTOR BASE VOLTAGE V CB (V)
TEMPERATURE (C )
2010. 11. 11
Revision No : 1
3/3
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