KTC2825D

KTC2825D

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTC2825D - EPITAXIAL PLANAR NPN TRANSISTOR - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
KTC2825D 数据手册
SEMICONDUCTOR TECHNICAL DATA LED DRIVE APPLICATION FEATURES ・Adoption of MBIT processes. ・Low collector-to-emitter saturation voltage. ・Fast switching speed. A C KTC2825D EPITAXIAL PLANAR NPN TRANSISTOR H J M N G F F 2 3 K L MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25℃ TC=25℃ SYMBOL VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg RATING 60 60 6 3 6 600 1 15 150 -55~150 UNIT V V V A A mA W W ℃ ℃ 1 DIM A B C D E F G H J K L M N MILLIMETERS _ 6.6 + 0.2 _ 6.1 + 0.2 _ 5.0 + 0.2 _ 1.1 + 0.2 _ 2.7 + 0.2 _ 2.3 + 0.1 1.0 MAX _ 2.3 + 0.2 _ 0.5 + 0.1 _ 1.0 + 0.1 _ 0.5 + 0.1 0.95 MAX _ 0.9 + 0.1 1. BASE 2. COLLECTOR 3. EMITTER E B D DPAK ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain SYMBOL ICBO IEBO hFE(1) hFE (2) VCE(sat) (1) VCE(sat) (2) VBE(sat) Cob ton tstg TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100㎃ VCE=2V, IC=3A IC=2A, IB=100㎃ IC=360㎃, IB=2㎃ IC=2A, IB=100㎃ VCB=10V, f=1㎒, IE=0 PW=20µs DC < 1% = INPUT I B1 R8 I B2 25 MIN. 200 35 - TYP. 0.19 0.94 25 35 MAX. 1 1 400 0.5 UNIT. ㎂ ㎂ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-on Time Switching Time V 0.3 1.2 V ㎊ Storage Time VR 50 100µ 470µ 25V 470 - nS Fall Time tf -5V 10IB1=-10I B2 =I C =1A - 90 - 2010. 11. 11 Revision No : 1 1/3 KTC2825D I C - V CE 5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 COLLECTOR CURRENT I C (A) 100mA 80mA 60mA 40mA 20mA 10mA 5mA I C - V BE 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=7 5C 25 -25 C C VCE =2V I B =0 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE V BE (V) I C - V CE 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 8mA h FE - I C 1k DC CURRENT GAIN h FE 500 300 VCE =2V 7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0 100 50 30 18 20 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 V CE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 I C /I B =20 10 5 3 1 0.5 0.3 Ta=25 C Ta=-25 C Ta=75 C 100 50 30 Ta=-25 C Ta=75 C Ta=25 C 0.1 0.01 0.03 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2010. 11. 11 Revision No : 1 2/3 KTC2825D OUTPUW CAPACITANCE C ob (pF) 100 50 30 COLLECTOR POWER DISSIPATION PC (W) C ob - V CB f=1MHz PC - TC 20 15 10 5 3 10 5 1 0 25 50 75 100 125 150 1 1 3 5 10 30 50 100 200 COLLECTOR BASE VOLTAGE V CB (V) TEMPERATURE (C ) 2010. 11. 11 Revision No : 1 3/3
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