KTC2875_09

SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=25V(Min.) ・High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA) A G L KTC2875 EPITAXIAL PLANAR NPN TRANSISTOR E B L ・Low on Resistance : RON=1Ω(Typ.), (IB=5mA) 2 3 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 50 20 25 300 60 150 150 -55～150 UNIT V V C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER V mA mA mW ℃ ℃ 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Lot No. Type Name M ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification A: 200~700, SYMBOL ICBO IEBO hFE VCE(sat) VBE fT Cob ton INPUT 50Ω 4kΩ 3kΩ TEST CONDITION VCB=50V, IE=0 VEB=25V, IC=0 VCE=2V, IC=4mA IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA VCB=10V, IE=0, f=1MHz OUTPUT MIN. 200 - TYP. 0.042 0.61 30 4.8 160 500 130 J D MAX. 0.1 0.1 1200 0.3 7 - UNIT μ A μ A V V MHz pF tstg tf 10V 1µs DUTY CYCLE < 2% = 1kΩ nS VBB =-3V VCC =12V B: 350～1200 2009. 3. 12 Revision No : 3 1/3 KTC2875 I C - VCE 50 COLLECTOR CURRENT I C (mA) 40 30 20 I B =20µA I C - V CE (REVERSE REGION) COLLECTOR CURRENT I C (mA) 160 COMMON EMITTER Ta=25 C -10 140 120 100 80 60 40 -8 -6 -4 -2 0 COMMON EMITTER Ta=25 C 50 40 30 20 I B=10µA 0 10 0 0 2 4 6 8 0 10 0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) 5k 3k DC CURRENT GAIN h FE COMMON EMITTER V CE(sat) - I C 500 300 100 50 30 10 5 3 1 0.1 COMMON EMITTER I C /I B =10 1k 500 300 Ta=100 C VCE =6V Ta=25 C Ta=-25 C 100 50 0.3 1 3 10 VCE =2V 30 100 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSTION FREQUENCY f T (MHz) COLLECTOR CURRENT I C (mA) 300 COMMON EMITTER VCE =2V fT - IE 500 300 COMMON EMITTER VCE =6V Ta=25 C 200 C 100 50 30 100 Ta= 1 00 Ta=25 C Ta=-25 C 10 5 -0.1 -0.3 -1 -3 -10 -30 -100 0 0 0.4 0.8 1.2 1.6 BASE-EMITTER VOLTAGE VBE (V) EMITTER CURRENT I E (mA) 2009. 3. 12 Revision No : 3 2/3 KTC2875 C ob - V CB COLLECTOR-EMITTER ON RESISTANCE R ON (Ω) COLLECTOR OUTPUT CAPACITANCE C ob (pF) 30 f=1MHz I E =0 Ta=25 C R ON - I B 100 50 30 10 5 3 1 0.5 0.3 0.01 1kΩ 10 5 3 10kΩ IB 1 0.3 0.5 1 3 5 10 30 0.03 0.1 0.3 1 3 10 COLLECTOR-BASE VOLTAGE VCB (V) BASE CURRENT I B (mA) Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 500 400 300 200 100 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2009. 3. 12 Revision No : 3 3/3