KTC3200_03

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES The KTC3200 is a transistor for low frequency and low noise applications. source impedance, and to lower the pulse noise. This is recommended for the first stages of equalizer amplifiers. Low Noise : NF=4dB(Typ.), Rg=100 : NF=0.5dB(Typ.), Rg=1k , VCE=6V, IC=100 A, f=1kHz , VCE=6V, IC=100 A, f=1kHz. H KTC3200 EPITAXIAL PLANAR NPN TRANSISTOR B C A This device is designed to ower noise figure in the region of low signal N K D E G Low Pulse Noise : Low 1/f Noise. High DC Current Gain : hFE=200 700. High Breakdown Voltage : VCEO=120V . Complementary to KTA1268. L 1 2 3 F F M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 120 120 5 100 -100 625 150 -55 150 UNIT V V V mA mA mW TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO V(BR)CEO hFE(Note) VCE(sat) VBE fT Cob ) TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=1mA, IB=0 VCE=6V, IC=2mA IC=10mA, IB=1mA VCE=6V, IC=2mA VCE=6V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=100 A, f=10Hz, Rg=10k MIN. 120 200 TYP. 0.65 100 3.0 4.0 MAX. 100 100 700 0.3 6.0 2.0 dB V V MHz pF UNIT nA nA V Noise Figure NF VCE=6V, IC=100 A, f=1kHz, Rg=10k VCE=6V, IC=100 A f=1kHz, Rg=100 Note : hFE Classification GR:200 400, BL:350 700 2003. 1. 15 Revision No : 1 1/2 KTC3200 NF - R g , I C 100k SIGNAL SOURCE RESISTANCE Rg (Ω) 1k DC CURRENT GAIN h FE COMMON EMITTER VCE =6V f=1kHz h FE - I C 12 10 500 300 Ta=100 C Ta=25 C Ta=-25 C 10k 4 NF 2 =1 dB 3 6 8 100 50 30 COMMON EMITTER VCE =6V 1k 3 NF 2 4 =1 dB 100 8 10 12 6 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 10 10 100 1k 10k COLLECTOR CURRENT IC (µA) Cob - VCB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 10 f=1MHz I E =0 Ta=25 C 5 3 NF - R g , I C 100k SIGNAL SOURCE RESISTANCE R g (Ω) COMMON EMITTER VCE =6V 12 f=10Hz 10 8 NF NF =1d 10k =1 dB 4 6 1 0 10 20 30 40 50 60 70 80 COLLECTOR-BASE VOLTAGE VCB (V) 2 3 1k B 2 3 6 100 10 12 8 4 10 10 100 1k 10k 300 COLLECTOR CURRENT I C (µA) 100 h PARAMETER 50 30 10 5 3 1 0.5 h PARAMETER - VCE h fe COMMON EMITTER I E =-1mA f=270Hz Ta=25 C h ie (xkΩ) h re (x10 -5 ) h oe (xµ ) Ω 1 3 5 10 30 50 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 1. 15 Revision No : 1 2/2