KTC3202-Y-AT/P

SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA1270. N E K G J D ) SYMBOL RATING UNIT H F Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IE -500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC L F 1 2 C CHARACTERISTIC 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.30 -+0.10 0.05 1.00 M MAXIMUM RATING (Ta=25 DIM A B C D E F G H J K L M N 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A hFE(1) (Note) VCE=1V, IC=100mA 70 - 400 hFE(2) (Note) VCE=6V, IC=400mA 25 - - VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V Transition Frequency fT VCE=6V, IC=20mA - 300 - MHz VCB=6V, IE=0, f=1MHz - 7.0 - pF DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 2005. 7. 18 0:70 140, 0:25Min., Y:120 240, GR:200~400 Y:40Min. Revision No : 0 1/2 KTC3202 2005. 7. 18 Revision No : 0 2/2