SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURES
Complementary to KTA1282.
B
KTC3210
EPITAXIAL PLANAR NPN TRANSISTOR
C
A
N
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 30 30 5 2 -2 625 150 -55 150 UNIT V V V A A mW
L
K D
E G
H
F
F
1
2
3
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification 0:100 200, Y:160 SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Cob 320 TEST CONDITION VCB=30V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IC=1mA, IC=0 VCE=2V, IC=500mA IC=1.5A, IB=0.03A VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, IE=0, f=1MHz MIN. 30 5 100 TYP. 120 13 MAX. 100 100 320 2.0 1.0 V V MHz pF UNIT nA nA V V
1999. 9. 10
Revision No : 0
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KTC3210
I C - VCE
COLLECTOR CURRENT I C (mA) 1400 1200 1000 800 600 400 200 0 0 2 4 6 8
4 3 2 I B=1mA 0
h FE - I C
DC CURRENT GAIN h FE
COMMON EMITTER Ta=25 C 6
1600
10 8
1k 500 300
Ta=100 C Ta=25 C Ta=-25 C
100 50 30
COMMON EMITTER VCE =2V
10 10 12 14 1 3 10 30 100 300 1k 5k COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE V CE (V)
I C - V BE
COLLECTOR CURRENT I C (mA) 1600 1400 1200 1000 800 600 400 200 0 0 5k 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE-EMITTER VOLTAGE V BE (V) 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3
Ta=-25 C Ta=25 C Ta=100 C COMMON EMITTER I C /I B =50
COMMON EMITTER VCE =2V
0.1 0.05 0.03
0.01
Pc - Ta
700 COLLECTOR POWER DISSIPATION Pc (mW) 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta ( C)
1999. 9. 10
Revision No : 0
C Ta=25 C Ta=-25 C
Ta=100
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