KTC3295

SEMICONDUCT OR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB(Typ.) at f=100Hz. 2 L KTC3295 EPITAXIAL PLANAR NPN TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 5 150 30 150 150 -55～150 UNIT P P V V V mA mA mW ℃ ℃ C N M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Lot No. Type Name T ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF (1) Noise Figure NF (2) Note : hFE Classification A:600～1800 , B:1200～3600 TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=100Hz, Rg=10kΩ VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ MIN. 600 100 TYP. 0.12 250 3.5 0.5 0.3 MAX. 0.1 0.1 3600 0.25 dB V MHz pF UNIT μ A μ A 2002. 4. 9 Revision No : 3 J D 1/3 KTC3295 I C - V CE COLLECTOR CURRENT I C (mA) 160 400 200 COMMON EMITTER Ta=25 C 100 80 h FE - I C 5k 3k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER V CE =6V Ta=100 C Ta=25 C Ta=-25 C 120 80 40 60 50 40 30 20 I B =10µA 0 0 0 2 4 6 8 COLLECTOR EMITTER VOLTAGE V CE (V) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) Ta=100 C Ta=25 C Ta=-25 C VBE(sat) - I C 30 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) 10 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /I B =10 Ta=25 C COMMON EMITTER I C /I B =10 I C - V BE TRANSITION FREQUENCY f T (MHz) 160 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =6V fT - IE 5k 3k 1k 500 300 100 50 30 10 -0.1 VCC =10V Ta=25 C 120 Ta=100 C 80 40 0 0 0.4 0.8 1.2 1.6 BASE EMITTER VOLTAGE V BE (V) Ta=-25 C Ta=25 C -0.3 -1 -3 -10 -30 -100 -300 EMITTER CURRENT I E (mA) 2002. 4. 9 Revision No : 3 2/3 KTC3295 yfe PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) FORWARD TRANSFER ADMITTANCE y (mS) fe -100 -50 -30 100 , Θ fe - I E -100 yfe C ib , g ib - I E INPUT CONDUCTANCE g ib (mS) 100 50 30 g ib C ib INPUT CAPACITANCE C ib (pF) 50 30 Θ fe COMMON BASE VCE =6V f=100MHz Ta=25 C -50 -30 -10 -5 10 5 -0.2 -10 -5 10 5 -0.2 COMMON BASE VCB =6V f=100MHz Ta=25 C -0.5 -1 -3 -5 -10 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) EMITTER CURRENT I E (mA) C ob , g ob - I E PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fb ( ) OUPUT CONDUCTANCE gob (µS) OUPUT CAPACITANCE C ob (pF) 20 10 5 3 200 100 50 30 COMMON EMITTER VCB =6V f=100MHz Ta=25 C yfb 1K 500 300 FORWARD TRANSFER ADMITTANCE y (mS) fb 100 50 30 COMMON BASE VCB =6V f=100MHz Ta=25 C , Θ fb - I E g ob yfb Θ fb C ob 1 0.5 10 5 -0.2 100 50 10 5 -0.2 -0.5 -1 -3 -5 -10 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) EMITTER CURRENT I E (mA) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ rb ( ) y rb REVERSE TRANSFER ADMITTANCE y rb (mS) -1k 1 COMMON BASE VCB =6V f=100MHz Ta=25 C y rb , Θ rb - I E 20 INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (mS) 10 C ie C ie , g ie - V CE -500 -300 0.5 0.3 COMMON BASE I E =-1mA 5 3 g ie f=100MHz Ta=25 C -100 -50 0.1 Θ rb 0.05 -0.2 -0.5 -1 -3 -5 -10 1 1 3 5 10 30 EMITTER CURRENT IE (mA) COLLECTOR-BASE VOLTAGE V CE (V) 2002. 4. 9 Revision No : 3 3/3