KTC3423

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY AMPLIFIER APPLICATION. C KTC3423 TRIPLE DIFFUSED NPN TRANSISTOR A B E F G D FEATURES High Breakdown Voltage : VCEO=150V(Min.). Low Output Capacitance : Cob=5.0pF(Max.). High Transition Frequency : fT=120MHz(Typ.). Complementary to KTA1360. H J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 150 150 5 50 5 1.5 5 150 -55 150 UNIT V V V mA mA W 1. EMITTER 2. COLLECTOR 3. BASE N M O 1 2 3 P DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70 140, Y:120 240 ) TEST CONDITION VCB=150V, IE=0 VEB=5V, IC=0 VCE=5V, IC=10mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=30V, IC=10mA VCB=10V, IE=0, f=1MHz MIN. 70 TYP. 120 3.5 MAX. 0.1 0.1 240 0.5 1.0 5.0 V V MHz pF UNIT A A ICBO IEBO SYMBOL hFE(Note) VCE(sat) VBE(sat) fT Cob 2003. 7. 24 Revision No : 1 1/3 KTC3423 I C - VCE 50 COLLECTOR CURRENT I C (mA) 00 10 h FE - I C 500 DC CURRENT GAIN h FE 300 COMMON EMITTER Ta=25 C VCE =10V V V CE CE 0 30 40 30 20 10 0 COMMON EMITTER Ta=25 C 200 150 100 I B=50µA 0 50 0 40 0 100 50 30 =5 V V =2 0 2 4 6 8 10 12 10 0.5 1 3 5 10 30 50 100 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1k DC CURRENT GAIN h FE 500 300 Ta=100 C Ta=25 C COMMON EMITTER VCE =5V VCE(sat) - I C 3 COMMON EMITTER Ta=25 C 1 0.5 0.3 100 50 20 0.5 Ta=0 C 0 =2 /I B 0 IC =1 =5 /I B I C I C /I B 0.1 0.05 0.5 1 3 5 10 30 50 100 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (mA) 2 1 0.5 0.3 1 Ta= C 00 Ta=25 C I C - VBE 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) COMMON EMITTER VCE =5V COMMON EMITTER IC /I B =10 Ta=100 C Ta=25 C Ta=0 C 0.1 0.05 0.03 0.5 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) 2003. 7. 24 Revision No : 1 Ta=0 C 2/3 KTC3423 COLLECTOR OUTPUT CAPACITANCE Cob (pF) EMITTER INPUT CAPACITANCE C ib (pF) C ib , Cob - V R 50 30 f=1MHz Ta=25 C fT - IC TRANSITION FREQUENCY f T (MHz) 500 300 COMMON EMITTER Ta=25 C VCE =30V 100 C ib (I C = 0) 100 50 30 VCE =10V VCE =2V 10 5 3 Cob (I E = 0) 10 5 0.5 1 3 5 10 1 1 3 5 10 30 50 100 200 30 50 100 REVERSE VOLTAGE VR (V) COLLECTOR CURRENT I C (mA) SAFE OPERATING AREA Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) COLLECTOR CURRENT I C (mA) 300 * SINGLE NONREPETITIVE PULSE Ta=25 C I C MAX. (PULSED) I C MAX. (CONTINUOUS) 1 * 00 m 100 50 30 3 * 00 S DC 1 * sec ER m S AT IO N 10 5 3 3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 5 10 30 50 100 VCEO MAX. OP 300 COLLECTOR-EMITTER VOLTAGE VCE (V) 2003. 7. 24 Revision No : 1 3/3