KTC3542T

SEMICONDUCTOR TECHNICAL DATA RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. KTC3542T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage. A F G K B DIM A B 2 3 C D MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 D Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dissipation. Complementary to KTA1542T. C L G High-Speed Switching. 1 E F G H I J K L J CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 0.8 RATING 40 30 5 3 5 600 0.9 150 -55 ) 150 UNIT V V V A mA W 1. EMITTER 2. BASE 3. COLLECTOR Marking Lot No. Type Name * Package mounted on a ceramic board (600 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Swiitching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton INPUT TEST CONDITION VCB=30V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=1.5A, IB=30mA IC=1.5A, IB=75mA IC=1.5A, IB=30mA VCE=2V, IC=500mA VCE=10V, IC=500mA VCB=10V, f=1MHz PW=20µs DC < 1% = IB1 I B2 RB 50Ω VR 100µF 470µF VCC =12V 24Ω MIN. 40 30 5 200 - OUTPUT Storage Time tstg Fall Time tf V BE =-5V 20IB1=-20IB2=IC =500mA 2001. 6. 29 Revision No : 0 I J MAXIMUM RATING (Ta=25 ) H TSM HH TYP. 120 105 0.83 450 20 30 MAX. 0.1 0.1 180 155 1.2 560 MHz pF UNIT A A V V V mV mV V - 300 - nS - 15 - 1/3 KTC3542T I C - V CE 50mA h FE - I C 6.0mA 2.0 COLLECTOR CURRENT I C (A) 1.6 1.2 0.8 0.4 0 0 20m A DC CURRENT GAIN h FE 1 A 0m 8.0 mA 1K 500 300 Ta=75 C Ta=25 C Ta=-25 C 4.0mA 30mA 40mA 100 50 30 VCE =2V 2.0mA IB=0mA 200 400 600 800 1K 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE VCE (mV) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 0.01 I C /I B =20 75 Ta= 2 Ta= 5C VCE(sat) - I C 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.01 T I C /I B =50 C -25 Ta= C C 75 -25 Ta= Ta= C a=25 C 0.03 0.1 0.3 1 3 10 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 5 3 I C /I B =50 I C - V BE 4.0 COLLECTOR CURRENT I C (A) 3.5 3.0 Ta=75 C Ta=2 5C Ta=-2 5C VCE =2V 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 1 0.5 0.3 Ta=-25 C Ta=25 C Ta=75 C 0.1 0.01 0.03 0.1 0.3 1 3 10 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (A) BASE-EMITTER VOLTAGE V BE (V) 2001. 6. 29 Revision No : 0 2/3 KTC3542T f T - IC COLLECTOR OUTPUT CAPACITANCE C ob (pF) TRANSITION FREQUENCY f T (MHz) 1K 500 300 100 VCE = 10V C ob - V CB f=1MHz 70 50 30 100 50 30 10 10 1 3 5 10 30 10 30 100 300 1K 3K COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V) SAFE OPERATING AREA 10 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 I C MAX.(PULSED) I C MAX (CONTINUOUS) DC Pc - Ta 1m S* 1.2 MOUNTED ON A 10 S 0µ * 0µ 50 10 1.0 0.8 0.6 0.4 0.2 0 CERAMIC BOARD (600mm 2 0.8mm) 0m OP S* ER AT IO N 10 mS S* * * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm) 0 20 40 60 80 100 120 140 160 0.3 0.5 1 3 5 10 30 50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 6. 29 Revision No : 0 3/3