KTC3551T-RTK/PW

SEMICONDUCTOR KTC3551T TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E FEATURES B K DIM A B Adoption of MBIT Processes. 1 C 3 D D G High-Speed Switching. 2 F A Low Collector-to-Emitter Saturation Voltage. G Large Current Capacitance. Ultrasmall Package Facilitates Miniaturization in end Products. MAXIMUM RATING (Ta=25 CHARACTERISTIC J SYMBOL RATING UNIT VCBO 80 V VCES 80 VCEO 50 VEBO 5 DC IC 1.0 Pulse ICP 3 IB 200 mA PC * 0.9 W Tj 150 Tstg -55 150 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current L ) Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Package mounted on a ceramic board (600 0.8 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 H I C Complementary to KTA1551T. 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + E F G H I J K L High Allowable Power Dis sipation. MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + J 1. EMITTER 2. BASE 3. COLLECTOR V V TSM A Marking Lot No. HK Type Name ) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current ICBO VCB=40V, IE=0 MIN. TYP. MAX. UNIT - - 0.1 A IEBO VEB=4V, IC=0 - - 0.1 A V(BR)CBO IC=10 A, IE=0 80 - - V Emitter Cut-off Current Collector-Base Breakdown Voltage TEST CONDITION V(BR)CES IC=100 A, VBE=0 80 - - V V(BR)CEO IC=1mA, IB=0 50 - - V V(BR)EBO IE=10 A, IC=0 5 - - V VCE(sat)1 IC=500mA, IB=10mA - 130 190 mV VCE(sat)2 IC=300mA, IB=6mA - 90 135 mV VBE(sat) IC=500mA, IB=10mA - 0.81 1.2 V DC Current Gain hFE VCE=2V, IC=100mA 200 - 560 Transition Frequency fT VCE=10V, IC=300mA - 420 - MHz VCB=10V, f=1MHz - 6 - pF - 35 - - 330 - - 40 - Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Turn-On Time Cob PW=20µs DC