SEMICONDUCTOR
TECHNICAL DATA
RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION.
KTC3551T
EPITAXIAL PLANAR NPN TRANSISTOR
E
FEATURES
Adoption of MBIT Processes. Large Current Capacitance. Low Collector-to-Emitter Saturation Voltage.
A G
K
B
DIM A B
2 3 C D
MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1
2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
D
Ultrasmall Package Facilitates Miniaturization in end Products. High Allowable Power Dis sipation. Complementary to KTA1551T.
C L
G
High-Speed Switching.
1
E F G H I J K L
J
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse
SYMBOL VCBO VCES VCEO VEBO IC ICP IB PC * Tj Tstg 0.8
RATING 80 80 50 5 1.0 3 200 0.9 150 -55 150 )
UNIT V V V A mA W
1. EMITTER 2. BASE 3. COLLECTOR
Marking
Lot No. Type Name
* Package mounted on a ceramic board (600
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Collector Output Capacitance Turn-On Time Switching Time SYMBOL ICBO IEBO V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO VCE(sat)1 VCE(sat)2 VBE(sat) hFE fT Cob ton
INPUT
TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 IC=10 A, IE=0 IC=100 A, VBE=0 IC=1mA, IB=0 IE=10 A, IC=0 IC=500mA, IB=10mA IC=300mA, IB=6mA IC=500mA, IB=10mA VCE=2V, IC=100mA VCE=10V, IC=300mA VCB=10V, f=1MHz
PW=20µs DC < 1% = IB1 I B2 RB RL OUTPUT
MIN. 80 80 50 5 200 -
Storage Time
tstg
50Ω
VR
100µF
470µF VCC =25V
Fall Time
tf
V BE =-5V 20IB1=-20IB2=IC =500mA
2001. 6. 28
Revision No : 0
I
MAXIMUM RATING (Ta=25
)
F
H J
TSM
HK
TYP. 130 90 0.81 420 6 35 MAX. 0.1 0.1 190 135 1.2 560 MHz pF UNIT A A V V V V mV mV V
-
330
-
nS
-
40
-
1/3
KTC3551T
I C - V CE
1K
50mA
h FE - I C
10mA
COLLECTOR CURRENT I C (A)
20m A
800 600 400 200 0
6mA 4mA 2mA
DC CURRENT GAIN h FE
30mA 40mA
1K
8mA
500 300
Ta=75 C Ta=25 C Ta=-25 C
100 50 30
VCE =2V
IB=0mA
0
0.2
0.4
0.6
0.8
1.0
10 0.01
0.03
0.1
0.3
1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (A)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
I C /I B =20
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3
I C /I B =50
1 0.5 0.3
0.1 0.05 0.03
Ta C =75
Ta 5 =-2 C
0.1 0.05 0.03
5 Ta=7
C Ta=25
C
25 Ta=-
C
C 25 Ta=
0.01 0.01
0.03
0.1
0.3
1
0.01 0.01
0.03
0.1
0.3
1
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
VBE(sat) - I C
10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 3 COLLECTOR CURRENT I C (A)
I C /I B =50
I C - V BE
1.0 0.9 0.8 0.7 0.6
Ta=7 5C Ta=2 5C
VCE =2V
Ta=-25 C Ta=25 C Ta=75 C
0.5 0.4 0.3 0.2 0.1 0 0 0.2 0.4
0.5 0.3
0.1 0.01
0.03
0.1
0.3
1
0.6
0.8
Ta=-2
5C
1
1.0
1.2
COLLECTOR CURRENT I C (A)
BASE-EMITTER VOLTAGE V BE (V)
2001. 6. 28
Revision No : 0
2/3
KTC3551T
f T - IC
TRANSITION FREQUENCY f T (MHz) 5K 3K COLLECTOR OUTPUT CAPACITANCE C ob (pF)
VCE =10V
C ob - V CB
100 50 30
f=1MHz
1K 500 300
10 5 3
100 50 0.01 0.03 0.1 0.3 1
1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V)
COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
5 3 COLLECTOR CURRENT I C (A) 1 0.5 0.3
Pc - Ta
I C MAX.(PULSED)
COLLECTOR POWER DISSIPATION PC (W)
1.2
MOUNTED ON A
10 0µ
50
S* 0µ
1m
I C MAX (CONTINUOUS)
D C O PE
S*
1.0 0.8 0.6 0.4 0.2 0
CERAMIC BOARD (600mm 2 0.8mm)
S*
10 m S*
10
RA TI O
S* 0m
0.1 0.05 0.03 0.01 0.1
* SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON A CERAMIC BOARD (600mm 2 0.8mm)
N
0
20
40
60
80
100
120
140
160
0.3
1
3
10
30
100
AMBIENT TEMPERATURE Ta ( C)
COLLECTOR-EMITTER VOLTAGE VCE (V)
2001. 6. 28
Revision No : 0
3/3
很抱歉,暂时无法提供与“KTC3551T”相匹配的价格&库存,您可以联系我们找货
免费人工找货