KTC3571S

SEMICONDUCTOR TECHNICAL DATA FEATURE ・Low Collector-Emitter Saturation Voltage VCE(sat). ・High Collector Current Capability : IC and ICP. ・Higher Efficiency Leading to Less Heat Generation. L KTC3571S EPITAXIAL PLANAR NPN TRANSISTOR E B L A G MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation** Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 120 100 5 1 3 300 350 150 -55～150 UNIT V V V 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H mA mW ℃ ℃ 1. EMITTER 2. BASE 3. COLLECTOR Note : * Package Mounted on 99.5% Alumina 10×8×0.6mm. K A M SOT-23 MARKING Lot No. Type Name KMB ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ** Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) (1) Collector-Emitter Saturation Voltage ** VCE(sat) (2) VCE(sat) (3) Base-Emitter Saturation Voltage ** Base-Emitter Voltag VBE(sat) VBE hFE(1) DC Current Gain ** hFE(2) hFE(3) hFE(4) Transition Frequency Collector Output Capacitance ** Pulse Width = 300μ Duty Cycle≤2%. S, fT Cob TEST CONDITION IC=100μ A IC=1mA IE=100μ A VCB=80V VEB=4V, IC=0A VCES=80V, VBE=0V IC=100mA, IB=10mA IC=500mA, IB=50mA IC=1A, IB=100mA IC=1A, IB=100mA VCE=10V, IC=1A VCE=10V, IC=1mA VCE=10V, IC=250mA VCE=10V, IC=500mA VCE=10V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz MIN. 120 100 5 150 150 100 80 100 TYP. 9.5 MAX. 100 100 100 0.04 0.12 0.2 1.05 0.9 500 MHz pF V V V UNIT V V V nA nA nA 2010. 2. 24 Revision No : 4 J D 1/3 KTC3571S VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 IC/IB=10 VCE(sat) - I C 10 IC/IB=50 Ta=25 C Ta=100 C 1 10-1 Ta=25 C Ta=-55 C 10-1 10-2 10-1 1 10 102 103 104 10-2 10-1 1 10 102 103 104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE - I C BASE-EMITTER VOLTAGE VBE (V) 1.2 VCE=10V h FE - I C 600 DC CURRENT GAIN h FE VCE=10V 0.8 Ta=-55 C Ta=25 C 400 Ta=100 C Ta=25 C 0.4 Ta=100 C 200 Ta=-55 C 0 10-1 1 10 102 103 104 0 10-1 1 10 102 103 104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE(sat) - I C 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC/IB=20 Ta=25 C I C - VCE IB=3150µA IB=3500µA IB=2800µA 1.6 IB=2450µA Ta=25 C 2 COLLECTOR CURRENT IC (A) 1.2 0.8 0.4 0 IB=2100µA IB=1750µA IB=1400µA IB=1050µA IB=700µA IB=350µA 1 10-1 10-1 1 10 102 103 104 0 1 2 3 4 5 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 4 2/3 KTC3571S SAFE OPERATING AREA COLLECTOR CURRENT I C (mA) 10000 IC MAX(PULSE)* 1000 100mS 10mS* 1mS* IC MAX(CONTINUOUS) 100 DC OPERATION(Ta=25 C) 10 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 0.1 1 10 100 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 4 3/3