KTC3605T

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3605T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e| =13dB (f=1GHz). 2 K B K 1 G 6 Two internal isolated Transistors in one package. A F 2 5 DIM A B C D E F G H I D 3 4 MILLIMETERS _ 2.9 + 0.2 1.6+0.2/-0.1 _ 0.70 + 0.05 _ 0.4 + 0.1 2.8+0.2/-0.3 _ 1.9 + 0.2 0.95 _ 0.16 + 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC* Tj Tstg RATING 20 10 1.5 40 900 150 -55 150 0.8mm) UNIT C I L G J K L H J J V V V mA mW 1. Q1 Base 2. Q1 Emitter 3. Q2 Collector 4. Q2 Base 5. Q2 Emitter 6. Q1 Collector TS6 *Package mounted on a ceramic board (600mm2 EQUIVALENT CIRCUIT (Top View) 6 5 4 Marking hFE Rank Q2 Q1 Lot No. Type Name R 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain |S21e|2 (2) NF (1) Noise Figure NF (2) VCE=8V, IC=5mA, f=2GHz 1.7 dB Note 1 : hFE Classification H:50~100, J:80~160, K:125~250 Note 2 : Cre is measured by 3 terminal method with capacitance bridge. VCE=8V, IC=20mA, f=2GHz VCE=8V, IC=5mA, f=1GHz 7 1.1 2.5 dB dB SYMBOL ICBO IEBO hFE (Note1) Cob VCB=10V, IE=0, f=1MHz (Note2) Cre fT |S21e|2 (1) VCE=8V, IC=20mA VCE=8V, IC=20mA, f=1GHz 7 10 0.5 10 13 0.95 pF GHz dB TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=8V, IC=20mA MIN. 50 TYP. 0.7 MAX. 1 1 250 pF UNIT A A 2007. 6. 21 Revision No : 0 1/5 KTC3605T TYPICAL CHARACTERISTICS (Ta=25 C) OUTPUT CAPACITANCE C ob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) h FE - I C 300 DC CURRENT GAIN h FE 200 C ob , C re - VCB 5 3 f=1MHz Ta=25 C 100 70 50 30 1 0.5 0.3 C ob C re VCE=8V Ta=25 C 10 1 2 3 5 7 10 20 30 50 COLLECTOR CURRENT I C (mA) 0.1 0.1 0.3 0.5 1 3 5 10 COLLECTOR-BASE VOLTAGE VCB (V) f T - IC TRANSITION FREQUENCY f T (GHz) (dB) 12 10 8 6 4 2 0 1 3 5 7 10 12 10 8 6 4 2 0 1 3 S 2le 2 - IC INSERTION GAIN S 2le 2 VCE=8V Ta=25 C VCE=8V f=2GHz Ta=25 C 30 5 7 10 30 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT I C (mA) S 2le (dB) 30 25 20 15 10 5 0 0.1 0.2 0.3 2 -f VCE=8V IC=20mA Ta=25 C NF - I C 5 VCE=8V Ta=25 C NOISE FIGURE NF (dB) 2 S 2le 4 3 f=2G Hz INSERTION GAIN 2 1 0 Hz f=1G 0.5 0.7 1 2 3 1 2 3 5 7 10 20 30 50 FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA) 2007. 6. 22 Revision No : 0 2/5 KTC3605T 10 (dB) 8 6 4 2 0 0 2 4 6 COLLECTOR POWER DISSIPATION P C (mW) S 2le 2 - VCE IC =20mA f=2GHz Ta=25 C Pc - Ta 300 INSERTION GAIN S 2le 2 200 100 0 0 50 100 150 8 10 COLLECTOR-EMITTER VOLTGE VCE (V) AMBIENT TEMPERATURE Ta ( C) S-PARAMETER (VCE=8V, IC=5mA, ZO=50 Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.683 0.462 0.343 0.282 0.249 0.236 0.233 0.234 0.238 0.251 , Ta=25 ) |S21| Ang. -50.1 -86.9 -113.1 -133.6 -151.0 -166.6 179.7 168.3 158.6 149.6 Mag. 10.186 7.472 5.618 4.407 3.663 3.128 2.759 2.457 2.224 2.038 Ang. 138.3 114.6 100.9 91.7 84.7 78.7 73.1 68.2 63.4 59.4 Mag. 0.049 0.071 0.086 0.101 0.115 0.131 0.150 0.168 0.185 0.203 |S12| Ang. 62.0 54.3 53.8 55.3 57.2 58.9 60.1 60.0 60.0 60.4 Mag. 0.773 0.556 0.448 0.392 0.360 0.339 0.330 0.319 0.311 0.302 |S22| Ang. -30.0 -39.6 -41.7 -41.6 -41.7 -41.7 -42.8 -45.0 -47.9 -50.2 |S11| (VCE=8V, IC=20mA, ZO=50 Frequency (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.319 0.213 0.185 0.176 0.174 0.178 0.186 0.194 0.199 0.215 |S11| , Ta=25 ) |S21| Ang. -91.9 -134.2 -160.0 -178.2 167.8 156.8 147.5 139.7 133.7 127.8 Mag. 18.338 10.303 7.111 5.415 4.400 3.712 3.236 2.874 2.583 2.369 Ang. 116.7 99.2 90.3 84.3 79.2 74.8 70.3 66.3 62.6 58.8 Mag. 0.033 0.054 0.076 0.098 0.120 0.143 0.168 0.190 0.211 0.232 |S12| Ang. 65.3 68.9 70.8 71.2 71.1 70.3 68.7 66.6 64.9 63.5 Mag. 0.494 0.312 0.258 0.236 0.228 0.226 0.226 0.223 0.216 0.211 |S22| Ang. -43.5 -42.4 -37.6 -34.3 -32.0 -31.5 -32.8 -35.9 -39.0 -41.9 2007. 6. 22 Revision No : 0 3/5 KTC3605T S11e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) S21e VCE =8V I C =5mA Ta=25 C j50 120 90 10 60 8 0.4 6 1.0 0.8 4 1.2 2 1.6 2.0 j25 j100 f=0.2GHz j150 j10 2.0 10 25 150 30 j250 0 1.6 1.2 0.8 50 100 250 _ + 180 10 8 6 4 2 0 0 -j10 0.4 f=0.2GHz -j250 -j150 -150 -30 -j25 -j100 -120 -j50 -90 -60 S12e VCE =8V I C =5mA Ta=25 C 120 90 0.25 0.20 2.0 0.15 60 S22e VCE =8V I C =5mA Ta=25 C (UNIT : Ω) j25 j50 j100 j150 150 0.10 0.05 1.6 1.2 0.8 0.4 f=0.2GHz 0.05 0.10 0.15 0.20 30 j10 j250 _ + 180 0 0.25 0 10 25 50 0.8 100 250 0 1.6 0.4 1.2 f=0.2GHz -j10 -150 -30 -j25 -120 -90 -60 -j50 2.0 -j250 -j150 -j100 2007. 6. 22 Revision No : 0 4/5 KTC3605T S11e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) j25 j50 S21e VCE =8V I C =20mA Ta=25 C 90 20 120 j100 j150 150 0.4 f=0.2GHz 16 12 60 30 8 0.6 1.2 1.6 2.0 j10 2.0 1.6 25 1.2 0.8 0.4 j250 4 50 100 250 0 10 _ + 180 20 16 12 8 4 0 0 -j10 f=0.2GHz -j250 -j150 -j25 -j100 -120 -j50 -90 -60 -150 -30 S12e VCE =8V I C =20mA Ta=25 C 120 90 0.25 60 0.20 1.6 0.15 2.0 S22e VCE =8V I C =20mA Ta=25 C (UNIT : Ω) j25 30 j10 j50 j100 j150 j250 150 0.10 0.05 1.2 0.8 0.4 f=0.2GHz 0 0.05 0.10 0.15 0.20 _ + 180 0.25 0 10 25 50 1.2 1.6 2.0 0.8 0.4 100 250 0 -j10 -150 -30 -j25 -120 -90 -60 -j50 f=0.2GHz -j250 -j150 -j100 2007. 6. 22 Revision No : 0 5/5