KTC3730F

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3730F EPITAXIAL PLANAR NPN TRANSISTOR FEATURES ・Low Noise Figure, High Gain. ・Small rbb’Cc (Typ. 4pS). E B A G MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 20 11 3 50 50 150 -55～150 UNIT V V V mA mW ℃ ℃ C K 3 1 1. EMITTER 2. BASE 3. COLLECTOR TFSM Marking Type Name J D 2 DIM A B C D E G J K MILLIMETERS _ 0.6 + 0.05 _ 0.8 + 0.05 0.38+0.02/-0.04 _ 0.2 + 0.05 _ 1.0 + 0.05 _ 0.35+ 0.05 _ 0.1 + 0.05 _ 0.15 + 0.05 3 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain Collector Output Capacitance Collector-Base Time Constant Transition Frequency Noise Figure Note) hFE Classification : F:56~120, G:82~180 SYMBOL ICBO IEBO VCE(sat) hFE (Note) Cob rbb’Cc fT NF TEST CONDITION VCB=10V, IE=0 VEB=2V, IC=0 IC=10mA, IB=5mA VCE=10V, IC=5mA VCB=10V, IE=0, f=1MHz VCE=10V, IE=10mA, f=31.8MHz VCE=10V, IC=10mA, f=500MHz VCE=6V, IC=2mA, f=500MHz, Rg=50Ω MIN. 56 1.4 TYP. 0.8 4 3.2 3.5 h FE Rank MAX. 500 0.5 0.5 180 1.5 12 - UNIT nA μ A V pF pS GHz dB 2005. 4. 7 Revision No : 0 1/3 KTC3730F TYPICAL CHARACTERISTICS (Ta=25 C) OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 300 C ob , C re - VCB 5 3 f=1MHz Ta=25 200 1 0.5 0.3 C ob C re 100 0 0 50 100 150 0.1 0.1 0.3 0.5 1 3 5 10 30 50 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) h FE - I C VCE =10V S 2le 15 (dB) 2 - IC 500 DC CURRENT GAIN h FE 300 INSERTION GAIN S 2le 2 10 100 50 30 5 VCE =10V f=500MHz 10 0.1 0 0.3 0.5 1 3 5 10 30 50 0.5 1 3 5 10 30 50 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR SATURATION VOLTAGE VCE(sat) (mW) 500 300 (dB) 30 25 20 15 10 5 0 0.3 0.5 1 3 5 10 30 50 0.1 0.3 S 2le 2 -f VCE =10V I C =10mA 100 50 30 I C /I B =2 I C /I B =10 10 0.1 INSERTION GAIN S 2le 2 0.5 1 3 COLLECTOR CURRENT I C (mA) FREQUENCY f (GHz) 2005. 4. 7 Revision No : 0 2/3 KTC3730F f T - IE COLLECTOR BASE TIME CONSTANT Cc. rbb (ps) TRANSITION FREQUENCY f T (GHz) 5 3 50 30 rbb. Cc - I C VCE =10V f=31.8MHz 1 0.5 0.3 VCE =10V 10 5 3 0.1 -0.1 1 0.1 0.3 0.5 1 3 5 10 30 50 -0.3-0.5 -1 -3 -5 -10 -30 -50 EMITTERCURRENT I E (mA) COLLECTOR CURRENT I C (mA) NF - I C 20 NOISE FIGURE NF (dB) VCE =6V f=500MHz S 2le 25 (dB) 20 15 10 5 0 2 - VCE IC =10mA f=500MHz 10 0 0.1 0.3 0.5 1 3 5 10 30 50 INSERTION GAIN S 2le 2 0 2 4 6 8 10 COLLECTOR CURRENT I C (mA) COLLECTOR EMITTER VOLTAGE VCE (V) NF - VCE 25 NOISE FIGURE NF (dB) 20 15 10 5 0 0 2 4 6 8 10 IC =10mA f=500MHz COLLECTOR EMITTER VOLTAGE VCE (V) 2005. 4. 7 Revision No : 0 3/3