KTC3770

SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3770S EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain. NF=1.1dB, |S21e| =11dB (f=1GHz). 2 L E B L 2 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 20 12 3 100 150 150 -55 150 UNIT V V V mA mW C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Lot No. Type Name R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE (Note1) Cob Cre fT |S21e| NF 2 TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=10V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=10V, IC=20mA VCE=10V, IC=20mA, f=1GHz VCE=10V, IC=7mA, f=1GHz MIN. 50 5 7.5 - TYP. 0.65 7 11.5 1.1 J D MAX. 1 1 250 1.0 1.15 2 UNIT A A pF pF GHz dB dB Note 1 : hFE Classification A:50~100, B:80~160, C:125~250. Note 2 : Cre is measured by 3 terminal method with capacitance bridge. 2003. 2. 12 Revision No : 1 1/5 KTC3770S TYPICAL CHARACTERISTICS (Ta=25 C) OUTPUT CAPACITANCE Cob (pF) REVERSE TRANSFER CAPACITANCE C re (pF) COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 300 250 200 150 100 50 0 0 25 50 75 100 125 150 C ob , C re - VCB 5 3 f=1MHz Ta=25 C 1 0.5 0.3 C re C ob 0.1 0.1 0.3 0.5 1 3 5 10 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-BASE VOLTAGE VCB (V) h FE - I C VCE =10V S 2le 15 2 2 - IC DC CURRENT GAIN h FE 300 INSERTION GAIN S 2le (dB) 10 500 100 50 30 5 VCE =10V f=1.0GHz 10 0.5 0 1 3 10 30 100 1 3 5 10 30 50 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) f T - IC TRANSITION FREQUENCY f T (GHz) 10 (dB) VCE =10V S 2le 30 2 -f VCE =10V I C =20mA 5 3 INSERTION GAIN S 2le 2 20 S 2le 2 10 1 1 3 5 10 30 50 100 0 0.1 0.3 0.5 1 3 COLLECTOR CURRENT I C (mA) FREQUENCY f (GHz) 2003. 2. 12 Revision No : 1 2/5 KTC3770S NF - I C 5 (dB) VCE =10V f=1.0GHz S 2le 15 12 9 6 3 2 - VCE NOISE FIGURE NF (dB) 4 3 2 1 0 0.5 1 3 10 30 100 INSERTION GAIN S 2le 2 f=1.0GHz I C =20mA 0 0 2 4 6 8 10 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTGE VCE (V) S-PARAMETER (VCE=10V, IC=5mA, ZO=50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 |S11| 0.651 0.467 0.391 0.360 0.360 0.361 0.381 0.398 0.423 0.445 ) S11 -69.3 -113.3 -139.3 -159.2 -176.9 172.7 160.3 152.2 143.3 137.6 |S21| 10.616 6.856 4.852 3.802 3.098 2.646 2.298 2.071 1.836 1.689 S21 129.3 104.4 90.9 81.2 72.9 67.3 59.3 55.2 49.0 46.2 |S12| 0.051 0.071 0.086 0.101 0.118 0.137 0.157 0.180 0.203 0.220 S12 59.2 54.4 56.0 59.1 61.0 63.5 63.3 64.1 63.7 64.7 |S22| 0.735 0.550 0.468 0.426 0.397 0.373 0.360 0.337 0.320 0.302 S22 -28.1 -34.1 -33.9 -33.6 -35.7 -38.3 -43.0 -45.9 -52.3 -52.2 (VCE=10V, IC=20mA, ZO=50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 |S11| 0.339 0.258 0.243 0.242 0.260 0.269 0.294 0.314 0.343 0.367 ) S11 -107.0 -147.3 -167.7 177.0 164.5 157.6 148.7 143.1 136.5 131.4 |S21| 16.516 8.928 6.022 4.633 3.744 3.193 2.750 2.479 2.185 2.016 S21 108.7 92.1 83.0 76.2 69.9 65.7 58.8 55.5 50.1 47.8 |S12| 0.035 0.060 0.085 0.109 0.136 0.160 0.187 0.212 0.238 0.254 S12 66.1 71.0 71.9 72.2 70.4 69.9 66.7 65.2 62.4 61.6 |S22| 0.459 0.343 0.305 0.284 0.266 0.246 0.233 0.208 0.190 0.173 S22 -36.6 -32.9 -29.9 -29.4 -31.7 -35.0 -40.4 -43.6 -50.5 -48.3 2003. 2. 12 Revision No : 1 3/5 KTC3770S S11e VCE =10V I C =5mA Ta=25 C (UNIT : Ω) j50 S12e VCE =10V I C =5mA Ta=25 C 120 90 10 60 j25 j100 f=0.2GHz 8 6 4 j150 j10 2.0 1.6 10 1.2 0.8 25 50 100 250 150 1.0 30 0.8 j250 2 1.2 1.6 2.0 0 _ + 180 10 8 6 4 2 0 0 -j10 0.4 -j250 -j150 -150 -30 -j25 f=0.2GHz -j100 -120 -j50 -90 -60 S21e VCE =10V I C =5mA Ta=25 C 120 90 0.25 0.20 0.15 0.10 0.05 2.0 1.6 60 S22e VCE =10V I C =5mA Ta=25 C (UNIT : Ω) j25 30 j50 j100 j150 150 1.2 0.8 0.4 f=0.2GHz 0.05 0.10 0.15 0.20 0.25 j10 j250 _ + 180 0 0 0 10 25 50 0.8 1.2 100 250 1.6 0.4 f=0.2GHz -j10 -150 -30 -j25 -120 -90 -60 -j50 2.0 -j250 -j150 -j100 2003. 2. 12 Revision No : 1 4/5 KTC3770S S11e VCE =10V I C =20mA Ta=25 C (UNIT : Ω) j25 j50 S12e VCE =10V I C =20mA Ta=25 C 120 j100 j150 150 f=0.2GHz 90 20 16 12 0.4 8 0.8 1.2 1.6 2.0 60 30 j10 2.0 1.6 1.2 10 25 0.4 50 100 250 j250 2 0 _ + 180 10 8 6 4 2 0 0 -j10 f=0.2GHz -j250 -j150 -150 -30 -j25 -j100 -120 -j50 -90 -60 S21e VCE =10V I C =20mA Ta=25 C 120 90 0.25 0.20 0.15 1.2 0.8 60 2.0 1.6 S22e VCE =10V I C =20mA Ta=25 C (UNIT : Ω) j25 30 j10 j50 j100 j150 j250 150 0.10 0.05 0.4 f=0.2GHz 0 0.05 0.10 0.15 0.20 0.25 _ + 180 0 0 10 25 50 1.2 1.6 2.0 0.8 0.4 100 250 -j10 -150 -30 -j25 -120 -90 -60 -j50 f=0.2GHz -j250 -j150 -j100 2003. 2. 12 Revision No : 1 5/5