KTC3875S-Y-RTK/P

SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). D ・Excellent hFE Linearity 2 H A 3 G ・High hFE : hFE=70～700. 1 ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTA1504S. Q ・Suffix U Qualified to AEC-Q101 for Automotive P P J except where specified. N C : Automotive and standard product are electrically and thermally the same, K ex) KTC3875S-Y-RTK/PU, KTC3875S-Y-RTK/HU DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range SOT-23 Marking h FE Rank Lot No. AL Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA 70 - 700 hFE(Note) DC Current Gain VCE=6V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - 0.86 1.0 V 80 - - MHz - 2.0 3.5 pF - 1.0 10 dB fT Transition Frequency Collector Output Capacitance Cob Noise Figure NF VCE=10V, IC=1mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA f=1kHz, Rg=10kΩ Note : hFE Classification 2015. 4. 09 O:70～140, Y:120～240, Revision No : 4 GR(G):200～400, BL(L):350～700 1/3 KTC3875S h FE - I C 280 3k COMMON EMITTER 240 Ta=25 C 5.0 6.0 200 3.0 DC CURRENT GAIN h FE 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 0 0 0 1 2 3 4 COMMON EMITTER 1k 500 300 100 50 30 V CE =1V 10 5 0.1 6 0.3 1 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B =10 1 0.5 0.3 0.1 Ta=100 C Ta=25 C Ta=-25 C 30 100 300 COMMON EMITTER I C /I B =10 Ta=25 C 10 5 3 1 0.5 0.3 0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) fT - IE I B - V BE 3k 1k 500 300 100 50 30 300 COMMON EMITTER VCE =6V 1k 300 100 00 C COMMON EMITTER V CE =10V Ta=25 C 30 Ta=1 3k BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION V CE(sat) (V) TRANSITION FREQUENCY f T (MHz) 30 3 10 3 1 10 -0.1 0.3 -0.3 -1 -3 -10 -30 -100 EMITTER CURRENT I E (mA) 2015. 4. 09 10 VBE(sat) - I C V CE(sat) - I C 0.01 0.1 3 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 0.05 0.03 VCE =6V Ta=100 C Ta=25 C Ta=-25 C Ta=2 5 C Ta=-2 5 C COLLECTOR CURRENT I C (mA) I C - V CE Revision No : 4 -300 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE V BE (V) 2/3 KTC3875S h PARAMETER - V CE h PARAMETER - I C 1k 5k 3k COMMON EMITTER VCE =12V, f=270Hz Ta=25 C GR 1k BL BL h fe Y O h ie xkΩ BL 30 BL GR GR 10 Y O h oe xµ Y O 3 30 GR 0.1 0.1 0.3 1 O BL GR Y Y O O h re x10 -4 0.3 3 10 50 0.1 0.5 COLLECTOR CURRENT I C (mA) h oe xµ Y 1 GR h re x10 -4 O BL GR BL 10 Y 0.3 h fe 100 3 BL 1 Y O h ie xkΩ h PARAMETER 100 GR 300 Ω h PARAMETER 300 COMMON EMITTER I C =2mA f=270Hz Ta=25 C Ω 5k 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR POWER DISSIPATION P C (mW) P C - Ta 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2015. 4. 09 Revision No : 4 3/3 KTC3875S REVISION HISTORY REV. NO DESCRIPTION OF REVISION DATE OF REVISION REVIEWER 0 New Technical Data Sheet 1995. 11. 01 Y. Han 1 Marking Lot No. change 1998. 6. 15 K.W. Nam 2 Product name change, according to name system of SOT-23 2001. 2. 24 J.S.Kim 3 Add VBE(sat) characteristic. 2004. 12. 3 H.C. Eom 4 Add quailified to AEC-Q101 for Automotive 2015. 4. 09 J.W. Park 2015. 4. 09 Revision No : 4 4/3