KTC3876S-Y-RTK/P

SEMICONDUCTOR KTC3876S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L ・Excellent hFE Linearity ・Complementary to KTA1505S. D : hFE(2)=25(Min.) at VCE=6V, IC=400mA. 3 H G A 2 1 Q P UNIT Collector-Base Voltage VCBO 35 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 500 mA Base Current IB 50 mA Collector Power Dissipation PC 150 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ J RATING K SYMBOL P N CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER Storage Temperature Range 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. W Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=35V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 μA hFE(1) VCE=1V, IC=100mA 70 - 400 hFE(2) VCE=6V, IC=400mA 25 - - VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V Base-Emitter Voltage VBE VCE=1V, IC=100mA - 0.8 1.0 V Transition Frequency fT VCE=6V, IC=20mA - 300 - MHz VCB=6V, IE=0, f=1MHz - 7.0 - pF DC Current Gain (Note) Collector-Emitter Saturation Voltage Cob Collector Output Capacitance (Note) : hFE(1) Classification hFE(2) Classification 2007. 5. 29 O:70～140 Y:120～240 O:25Min. Y:40Min. Revision No : 3 GR:200～400 1/2 KTC3876S h FE - I C 500 500 COMMON EMITTER Ta=25 C 400 4.0 6.0 DC CURRENT GAIN h FE 3.0 2.0 300 200 1.0 0.5 100 VCE =6V Ta =100 C Ta =25 C C Ta =-25 100 VCE =1V 50 30 I B =0.1mA COMMON EMITTER 0 10 0 2 1 3 4 5 0.5 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C I B - VBE 1 1K 2K Ta =25 C Ta =-25 C Ta =100 C 0.05 50 30 5 C C 100 Ta =-2 0.1 500 300 5 C 0.3 100 0.5 COMMON EMITTER VCE =6V 1K Ta =2 COMMON EMITTER I C /I B =10 BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 300 Ta = COLLECTOR CURRENT I C (mA) I C - VCE (LOW VOLTAGE REGION) 10 5 0.03 0.5 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2007. 5. 29 Revision No : 3 2/2