KTC3878S

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. HF, VHF AMPLIFIER APPLICATION. FEATURE Low Noise Figure : NF=3.5dB(Max.) (f=1MHz). 2 L KTC3878S EPITAXIAL PLANAR NPN TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 35 30 4 100 -100 150 150 -55 150 UNIT P P V V V mA mA mW C N M DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Type Name Lot No. F ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Reverse Transfer Capacitance Collector-Base Time Constant Noise Figure Note : hFE Classification R:40 80 , O:70 ) TEST CONDITION VCB=20V, IE=0 VEB=2V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=2mA VCB=10V, IE=0, f=1MHz VCE=10V, IE=-1mA, f=30MHz VCE=10V, IE=-1mA, f=1MHz, Rg=50 240 MIN. 40 80 TYP. 120 2.2 30 2.0 MAX. 0.1 1.0 240 0.4 1.0 3.0 50 3.5 V V MHz pF pS dB UNIT A A ICBO IEBO SYMBOL hFE (Note) VCE(sat) VBE(sat) fT Cre Cc rbb’ NF 140 , Y:120 2001. 2. 24 Revision No : 2 J D 1/2 KTC3878S y PARAMETERS (Typ.) (COMMON EMITTER VCE=6V, IE=-1mA, f=1MHz) CHARACTERISTIC Input Conductance Input Capacitance Output Conductance Output Capacitance Forward Transfer Admittance Phase Angle of Forward Transfer Admittance Reverse Transfer Admittance Phase Angle of Reverse Transfer Admittance SYMBOL gie Cie goe Coe |yfe| fe KTC3878S-R 0.5 50 4 3.7 36 -1.6 14 -90 KTC3878S-O 0.35 48 5 3.4 36 -1.6 14 -90 KTC3878S-Y 0.22 46 6.5 3.2 36 -1.6 14 -90 UNIT mS pF S pF mS |yre| re S y re REVERSE TRANSFER ADMITTANCE yre (µS) 100 50 30 - IE PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) FORWARD TRANSFER ADMITTANCE y (mS) COMMON EMITTER V CE =6V f=1MHz Θ re =-90 Ta=25 C y fe , Θfe - I E -10 -5 -3 100 50 30 COMMON EMITTER VCE =6V f=1MHz Ta=25 C yfe R, O, Y Θ fe R, O, Y fe -1 -0.5 -0.3 10 5 3 -0.1 -0.3 -1 -3 -5 10 5 -0.1 -0.3 -1 (mA) -3 -5 EMITTER CURRENT I E EMITTER CURRENT I E (mA) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE Θ fe ( ) y re REVERSE TRANSFER ADMITTANCE yre (µS) 100 50 30 - VCE COMMON EMITTER I E =-1mA f=1MHz Θ re =-90 Ta=25 C y fe , Θfe - VCE FORWARD TRANSFER ADMITTANCE y (mS) -50 -30 500 300 COMMON EMITTER VCE =6V f=1MHz Ta=25 C y fe Θ fe -10 -5 -3 100 50 30 10 5 3 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE VCE (V) fe -1 -0.5 -0.3 10 5 3 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE VCE (V) 2001. 2. 24 Revision No : 2 2/2