KTC4072E

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). : VCE(sat) 250mV at IC=200mA/IB=10mA. A G H 2 1 KTC4072E EPITAXIAL PLANAR NPN TRANSISTOR E B D 3 DIM A B C D E G H J Complementary to KTA2012E. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Single pulse Pw=1mS. SYMBOL VCBO VCEO VEBO IC ICP * PC Tj Tstg RATING 15 12 6 500 1 100 150 -55 150 UNIT V V V mA A mW 1. EMITTER 2. BASE 3. COLLECTOR C MAXIMUM RATING (Ta=25 ) J ESM Marking Type Name LZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO V(BR)CBO V(BR)CEO V(BR)EBO hFE VCE(sat) fT Cob ) TEST CONDITION VCB=15V, IE=0 IC=10 A IC=1mA IE=10 A VCE=2V, IC=10mA IC=200mA, IB=10mA VCE=2V, IC=10mA, fT=100MHz VCB=10V, IE=0, f=1MHz MIN. 15 12 6 270 TYP. 90 320 7.5 MAX. 100 680 250 UNIT nA V V V mV MHz pF SYMBOL 2002. 2. 20 Revision No : 2 1/3 KTC4072E h FE - I C 1K DC CURRENT GAIN h FE 500 300 Ta=125 C Ta=25 C Ta=-40 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 3 10 C 125 Ta= CC 25 0 Ta= Ta=-4 I C /IB =20 100 50 30 VCE =2V 10 1 3 10 30 100 300 1K 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 100 50 30 10 5 3 1 1 I C /IB =50 I C /I B =20 10 I C/I B = VBE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (mV) 10K 5K 3K I C /IB =20 Ta=25 C 1K 500 300 Ta=-40 C Ta=25 C 5 C Ta=12 100 3 10 30 100 300 1K 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE COLLECTOR CURRENT I C (mA) 500 300 100 5C Ta=40 C Ta=1 Ta=2 VCE =2V fT - IC TRANSITION FREQUENCY f T (MHz) 1K 500 300 VCE =2V Ta=25 C 1K 50 30 10 5 3 1 0 25 C 100 50 30 10 1 3 10 30 100 300 1K COLLECTOR CURRENT I C (mA) 0.5 1.0 1.5 BASE-EMITTER VOLTAGE VBE (V) 2002. 2. 20 Revision No : 2 2/3 KTC4072E C ob - VCB , C ib - VEB COLLECTOR INPUT CAPACITANCE C ib (PF) COLLECTOR OUTPUT CAPACITANCE C ob (PF) I E =0A f=1MHz Ta=25 C 500 300 100 50 30 10 5 3 1 COLLECTOR POWER DISSIPATION P C (mW) 1K Pc - Ta 200 150 C ib C ob 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) EMITTER-BASE VOLTAGE VEB (V) 2002. 2. 20 Revision No : 2 3/3