KTC4373

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Voltage : VCEO=120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTA1661. D K F F D KTC4373 EPITAXIAL PLANAR NPN TRANSISTOR A H C G J B E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC PC* Tj Tstg 2 1 2 3 RATING 120 120 5 800 160 500 1 150 -55 150 UNIT V 1. BASE DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 V V mA mA mW W 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 PC* : KTC4373 mounted on ceramic substrate (250mm x0.8t) Marking h FE Rank Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:80 160, Y:120 ) TEST CONDITION VCB=120V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=100mA VCB=10V, IE=0, f=1MHz MIN. 120 5.0 80 TYP. 120 MAX. 100 100 240 1.0 1.0 30 V V MHz pF UNIT nA nA V V SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO hFE (Note) VCE(sat) VBE fT Cob 240 1998. 6. 15 Revision No : 2 C Type Name 1/2 KTC4373 1998. 6. 15 Revision No : 2 2/2