KTC4375-Y-RTF/P

SEMICONDUCTOR KTC4375 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES ・1W (Mounted on Ceramic Substrate). A C ・Small Flat Package. H ・Complementary to KTA1663. L G J B E M DIM A B C D E F G H J K L M N N CHARACTERISTIC D D MAXIMUM RATING (Ta=25℃) K SYMBOL RATING UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Collector Current IC 1.5 A Base Current IB 0.3 A PC 500 mW PC* 1 W Tj 150 ℃ Tstg -55～150 ℃ F 1 F 2 3 MILLIMETERS 4.70 MAX _ 0.20 2.50 + 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 0.10 1.50 + 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 _ 0.10 1.40 + _ 0.10 0.19 + _ 0.10 0.47 + 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER Collector Power Dissipation Junction Temperature Storage Temperature Range SOT-89 2 PC* : KTC4375 mounted on ceramic substrate (250mm x0.8t) Marking h FE Rank Lot No. G Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=30V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5 - - V DC Current Gain hFE (Note) VCE=2V, IC=500mA 100 - 320 VCE(sat) IC=1.5A, IB=0.03A - - 2.0 V Base-Emitter Voltage VBE VCE=2V, IC=500mA - - 1.0 V Transition Frequency fT VCE=2V, IC=500mA - 120 - MHz VCB=10V, IE=0, f=1MHz - - 40 pF Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 2013.1.29 O:100～200, Y:160～320 Revision No : 4 1/2 KTC4375 h FE - I C 1.6 8 10 6 1.2 1k COMMON EMITTER Ta=25 C DC CURRENT GAIN hFE COLLECTOR CURRENT I C (mA) I C - V CE 5 4 0.8 3 2 0.4 I B =1mA 500 Ta=100 C Ta=25 C 300 Ta=-25 C 100 50 30 COMMON EMITTER V CE =2V 0 0 0 4 10 12 8 16 1 20 3 30 10 COMMON EMITTER I C /I B =50 0.5 0.3 0.1 Ta=100 C Ta=25 C 0.05 Ta=-25 C 0.03 0.01 COMMON EMITTER V CE =2V 1.2 Ta=100 C Ta=25 C Ta=-25 C 1 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1.6 0.8 0.4 0 1 3 10 30 100 300 1k 0.4 0 2k COLLECTOR-CURRENT I C (mA) * 10 0m S 1k DC 100 50 30 10 5 0.1 S * 1m S * m 10 I C MAX(CONTINUOUS) 500 300 COLLECTOR POWER DISSIPATION PC (W) I C MAX(PULSE) * 1s * OP ER AT I 0.8 1.2 1.6 2.0 2.4 BASE EMITTER VOLTAGE V BE (V) SAFE OPERATING AREA COLLECTOR CURRENT I C (mA) 2k I C - V BE V CE(sat) - I C 3k 1k 300 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE V CE (V) 5k 100 ON * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE P C - Ta 1.2 1 MOUNTED ON CERAMIC 1 SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C 1.0 0.8 0.6 2 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 0.3 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE V CE (V) 2013.1.29 Revision No : 4 2/2