KTC4377_03

SEMICONDUCTOR TECHNICAL DATA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=2A, IB=50mA). Small Flat Package. 1W (Mounted on Ceramic Substrate). 1 2 3 D K F F D A H KTC4377 EPITAXIAL PLANAR NPN TRANSISTOR C G J B E MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC ) SYMBOL VCBO VCES VCEO VEBO IC ICP IB IBP PC PC* Tj Tstg RATING 30 30 10 6 2 4 0.4 0.8 500 1 150 -55 150 UNIT V V V A 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 SOT-89 Pulse (Note 1) DC Pulse (Note 1) Base Current A mW W Marking h FE Rank Lot No. Collector Power Dissipation Junction Temperature Storage Temperature Range Note 1 : Pulse Width 10mS, Duty Cycle 30% PC* : KTC4377 mounted on ceramic substrate (250mm2x0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation-Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification A:140~240, ) SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO TEST CONDITION VCB=30V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 IE=1mA, IC=0 VCE=1V, IC=0.5A VCE=1V, IC=2A IC=2A, IB=50mA VCE=1V, IC=2A VCE=1V, IC=0.5A VCB=10V, IE=0, f=1MHz C:300~450, D:420~600 MIN. 10 6 140 70 TYP. 140 0.2 0.86 150 27 MAX. 100 100 600 0.5 1.5 V V MHz pF UNIT nA nA V V hFE(1) (Note1) hFE(2) VCE(sat) VBE fT Cob B:200~330, 2003. 9. 16 Revision No : 4 S Type Name 1/2 KTC4377 I C - V CE 4.0 COLLECTOR CURRENT I C (A) 60 h FE - I C 1k 500 300 Ta=25 C Ta=-25 C Ta=100 C 25 15 10 COMMON EMITTER Ta=25 C 3.0 DC CURRENT GAIN hFE 2.0 I B =5mA 100 50 30 1.0 0 COMMON EMITTER VCE =1V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COLLECTOR CURRENT I C (A) COMMON EMITTER I C /I B =10 I C - V BE 4.0 3.2 2.4 1.6 0.8 0 C COMMON EMITTER VCE =1V Ta=100 0.1 0.05 0.03 C 00 =1 Ta Ta=25 C Ta=-25 C Ta=25 C Ta=-25 C 0.01 0.01 0.03 0.1 0.3 1 3 10 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 COLLECTOR-CURRENT I C (mA) BASE EMITTER VOLTAGE V BE (V) 10 I C MAX(PULSE) COLLECTOR POWER DISSIPATION PC (W) SAFE OPERATING AREA * P C - Ta 1.2 1.0 0.8 0.6 0.4 0.2 0 2 1 1 MOUNTED ON CERAMIC COLLECTOR CURRENT I C (A) 3 1 0.3 0.1 0.03 0.01 I C MAX(CONTINUOUS) DC OP 10 0m S SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C S m 10 * * ER AT IO N * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 3 10 30 100 0.1 0.3 1 COLLECTOR-EMITTER VOLTAGE V CE (V) 2003. 9. 16 Revision No : 4 2/2