KTC4419_07

SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. HIGH SPEED DC-DC CONVERTER APPLICATION. S KTC4419 TRIPLE DIFFUSED NPN TRANSISTOR A C FEATURES Excellent Switching Times. : ton=1.0 S(Max.), tf=0.5 S(Max.) at IC=1.5A. High Collector Voltage : VCEO=400V. E DIM A B C D E F G H J K L M N P Q R H S K L L R M D D MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current ) SYMBOL VCBO VCEO VEBO IC ICP IB ) PC Tj Tstg RATING 500 400 7 5 A 10 UNIT V V V 1 2 3 N N MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F G J Q B 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS 2 30 150 -55 150 A W Collector Power Dissipation (Tc=25 Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) fT ton tstg tf IB1 IB2 IB1=0.15A , I B2 =-0.3A DUTY CYCLE < 1% = I B2 SYMBOL ICBO IEBO V(BR)CEO hFE(1) TEST CONDITION VCB=500V, IE=0 VEB=7V, IC=0 IC=10mA, IB=0 VCE=4V, IC=0.1A VCE=4V, IC=1.5A IC=1.5A, IB=0.3A IC=1.5A, IB==0.3A VCE=12V, IC=0.3A 20µS INPUT I B1 133Ω OUTPUT MIN. 400 20 10 - P TYP. 20 - MAX. 100 100 40 0.5 1.0 1.0 2.5 0.5 UNIT A A V V V MHz S VCC =200V 2007. 5. 22 Revision No : 3 1/3 KTC4419 h FE - I C COMMON EMITTER VCE =4V VCE(sat) - I C SATURATION VOLTAGE V CE(sat) (V) COMMON EMITTER 100 DC CURRENT GAIN h FE 50 Tc=-55 C COLLECTOR-EMITTER Tc=125 C Tc=25 C 2 I C /I B =5 1 10 5 3 0.01 0.05 0.1 0.5 1 5 0 0.01 0.05 0.1 0.5 1 5 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - V BE BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) 5 COLLECTOR CURRENT IC (A) COMMON EMITTER V BE(sat) - I C COMMON EMITTER 4 3 2 1 VCE =4V 2 I C /I B=5 1 =1 25 C Tc C 25 Tc= 0 0 1 BASE-EMITTER VOLTAGE VBE (V) 2 Tc= -55 C 0 0.01 0.05 0.1 0.5 1 5 COLLECTOR CURRENT I C (A) SWITCHING CHARACTERISTICS 10 5 SWITCHING TIME (µS) COLLECTOR CURRENT I C (A) ~ VCC = 200V I C :I B1 :I B2 =10:1:2 SAFE OPERATING AREA 10 5 IC MAX. (CONTINUOUS) 10m I C MAX.(PULSED) 1m S S 100 50µ S µS t stg AT ER OP C C5 D. a=2 T 1 0.5 t on tf 1 0.5 IO N 0.1 0.1 0.5 1 5 0.01 2 5 10 50 100 500 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 3 VCEO MAX. 0.1 0.05 SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 2/3 KTC4419 Pc - Ta COLLECTOR POWER DISSIPATION Pc (W) 30 1 REVERSE BIAS SAFE OPERATING AREA 6.0 COLLECTOR CURRENT I C (A) I C =I B =5(IB =-2I B ) 1 Tc=Ta INFINITE HEAT SINK 2 NO HEAT SINK 5.0 4.0 3.0 2.0 1.0 0 Lcoil=100µH 20 10 2 0 0 50 100 150 0 100 200 300 400 500 600 700 AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 5. 22 Revision No : 3 3/3