KTC4511

SEMICONDUCT OR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTA1725. A U E KTC4511 EPITAXIAL PLANAR NPN TRANSISTOR C S T L L CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 80 6 6 3 30 150 -55～150 UNIT V V V A A W ℃ ℃ O D D N T N T Q 1 2 3 J MAXIMUM RATING (Ta=25℃) M DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70±0.30 D 0.85 MAX E Φ3.20±0.20 F 3.00±0.30 12.30 MAX G 0.75 MAX RH 13.60±0.50 J K 3.90 MAX L 1.20 1.30 M V N 2.54 4.50±0.20 O P 6.80 2.60±0.20 Q R 10° H S 25° 5° T U 0.5 V 2.60±0.15 F G B K 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110, SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT Cob O:80~160. TEST CONDITION VCB=80V, IE=0 VEB=6V, IC=0 IC=25mA, IB=0 VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 80 55 TYP. 20 150 MAX. 10 10 160 0.5 V MHz pF UNIT μ A μ A V 2002. 6. 5 Revision No : 0 P 1/3 KTC4511 I C - V CE COLLECTOR CURRENT I C (A) A A 0m 150m 20 = = IB IB VCE(sat) - I B I B=8 0mA A 100m I B= 4 I B =50mA COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 6 3 2 I B =30mA 2 I B =20mA I B =10mA 1 I C =6A 0 0 0 I C =2A I C =4A 0 1 2 3 4 0.5 1.0 1.5 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT I B (A) I C - V BE 6 COLLECTOR CURRENT I C (A) VCE =4V h FE - I C 1k DC CURRENT GAIN h FE 500 300 Tc=125 C VCE =4V 4 Tc= 125 C Tc= 25 C C 100 50 30 2 C Tc=25 C Tc=-30 0 0 1 BASE-EMITTER VOLTAGE VBE (V) 2 Tc= -30 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) h FE - I C 1k DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C Tc=-30 C R th - t TRANSIENT THERMAL RESISTANCE r th ( C/W) 1k 1 NO HEAT SINK 2 INFINITE SINK VCE =4V 100 1 100 50 30 10 2 1 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.001 0.01 0.1 1 TIME t (S) 10 100 1k COLLECTOR CURRENT I C (A) 2002. 6. 5 Revision No : 0 2/3 KTC4511 fT - IE CUT-OFF FREQUENCY f T (MHz) 30 VCE =-12V C 5 12 c= C T 25 C c= 0 T =-3 Tc SAFE OPERATING AREA 30 COLLECTOR CURRENT I C (A) 10 5 3 1 0.5 0.3 0.1 0.05 3 I C MAX.(PULSED) 20 100ms* DC (T c= 2 10 ms * 5 C) 10 0 -0.01 -0.03 -0.1 -0.3 -1 (A) -3 -10 EMITTER CURRENT I E *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) MAXIMUM POWER DISSIPATION PC (W) Pc - Ta 40 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) (2) (1) (1)Tc=Ta INFINITE HEAT SINK (2)NO HEAT SINK 2002. 6. 5 Revision No : 0 3/3