KTC4512

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES Amplifier Output Stage. Complementary to KTA1726. Q E A R S KTC4512 EPITAXIAL PLANAR NPN TRANSISTOR Recommended for 30W 35W Audio Frequency F D P CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 80 6 6 3 50 150 -55 150 UNIT V V V A A W K L C C M M J 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-220AB ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification R:55~110, ) TEST CONDITION VCB=80V, IE=0 VEB=6V, IC=0 IC=25mA, IB=0 VCE=4V, IC=2A IC=2A, IB=0.2A VCE=12V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 80 55 TYP. 20 150 MAX. 10 10 160 0.5 V MHz pF UNIT A A V SYMBOL ICBO IEBO V(BR)CEO hFE (Note) VCE(sat) fT Cob O:80~160. 1999. 6. 24 Revision No : 0 O 1 2 3 N G MAXIMUM RATING (Ta=25 ) H T DIM A B C D E F G H J K L M N O P Q R S T MILLIMETERS 10.30 MAX 15.30 MAX 0.80 _ Φ3.60 + 0.20 3.00 6.70 MAX _ 13.60 + 0.50 5.60 MAX 1.37 MAX 0.50 1.50 MAX 2.54 4.70 MAX 2.60 1.50 MAX 1.50 _ 9.50 + 0.20 _ 8.00 + 0.20 2.90 MAX B 1/3 KTC4512 I C - V CE COLLECTOR CURRENT I C (A) mA 50m 00 1 =2 I B= IB VCE(sat) - I B 0m I B=8 A A 100 I B= mA 4 I B =50mA COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 6 3 2 I B =30mA 2 I B =20mA I B =10mA 1 I C =6A 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE VCE (V) 0 0 I C =2A I C =4A 0.5 1.0 1.5 BASE CURRENT I B (A) I C - V BE 6 COLLECTOR CURRENT I C (A) VCE =4V h FE - I C 1k DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C VCE =4V 4 Tc= 125 C Tc= 25 C -30 C 100 50 30 Tc= 2 C Tc=-30 0 0 1 BASE-EMITTER VOLTAGE VBE (V) 2 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) h FE - I C 1k DC CURRENT GAIN h FE 500 300 Tc=125 C Tc=25 C Tc=-30 C r th - t w TRANSITION THERMAL RESISTANCE r th ( C/W) 10 5 3 E AT NO H SINK VCE =4V CURVES SHOULD BE APPLIED IN THERMA LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 100 50 30 1 0.5 0.3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 1 3 10 30 100 300 1000 COLLECTOR CURRENT I C (A) PULSE WIDTH t w (sec) 1999. 6. 24 Revision No : 0 2/3 KTC4512 fT - IE CUT-OFF FREQUENCY f T (MHz) 30 VCE =-12V SAFE OPERATING AREA 30 COLLECTOR CURRENT I C (A) 10 5 3 1 0.5 0.3 0.1 0.05 3 I C MAX.(PULSED)* 10ms* 100ms* 20 Tc 2 =1 5 C T 2 c= 5 C 0 C Tc =-3 DC (T c= 25 10 C) 0 -0.01 -0.03 -0.1 -0.3 -1 (A) -3 -10 EMITTER CURRENT I E *SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) MAXIMUM POWER DISSIPATION PC (W) Pc - Ta 50 40 30 20 10 (2) (1)Tc=Ta INFINITE HEAT SINK (2)NO NEAT SINK (1) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 1999. 6. 24 Revision No : 0 3/3