KTC4520F

SEMICONDUCTOR TECHNICAL DATA SWITCHING REGULATOR APPLICATION. HIGH VOLTAGE SWITCHING APPLICATION. FEATURES ・Excellent Switching Times. S(Max.), tf=0.3μ S(Max.), at IC=2A. : ton=0.5μ ・High Collector Voltage : VCEO=500V. L M D D L S E KTC4520F TRIPLE DIFFUSED NPN TRANSISTOR A F C DIM A B C D E F G H J K L M N P Q R S R MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 800 500 7 3 A 6 1 30 150 -55～150 A W ℃ ℃ UNIT V V V N N MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ K G J B P H 1 2 3 Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector Output Capacitance Transition Frequency Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO IEBO VCEX(SUS) VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) Cob fT ton tstg tf TEST CONDITION VCB=500V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.6A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.3A VCE=5V, IC=1.5A VCB=10V, IE=0, f=1MHz VCE=10V, IC=0.3A MIN. 500 15 8 TYP. 50 18 MAX. 10 10 1 1.5 50 0.5 3 0.3 μ S pF MHz UNIT μ A μ A V V V Note : hFE (1) Classification R:15～30, O:20～40, Y:30～50 2010. 6. 17 Revision No : 1 1/3 KTC4520F I C - VBE 4 COLLECTOR CURRENT I C (A) VCE =5V STATURATION VOLTAGE V BE(sat) , VCE(sat) (V) V CE(sat), V BE(sat) - I C 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 V CE(sat) V BE(sat) I C /I B =5 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.8 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT I C (A) h FE - I C 1000 COLLECTOR CURRENT I C (A) 500 DC CURRENT GAIN h FE 200 100 50 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 V CE =5V I C - V CE 5 4 A I B =500m I B =400mA I =300mA I B =200mA I B =100mA B 3 2 1 0 1 2 3 4 5 I B =50mA I B =20mA I B =0mA 6 7 8 9 10 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) SAFE OPERATING AREA 10 I C MAX.(Pulse)* 5 IC MAX. (CONTINUOUS) COLLECTOR CURRENT I C (A) 2 1 0.5 0.2 0.1 0.05 D REVERSE BIAS SAFE OPERATING AREA 10 5 COLLECTOR CURRENT I C (A) 2 1 0.5 0.2 0.1 0.05 0.02 0.01 I B 2=-0.6A L=200µH *5 C O Tc PE =2 RA 5T C IO * 0m 1mS PC S =3 0W *1 S 0µ *1 µS 00 N 0.02 0.01 * SINALE NONREPETITIVE 0.005 PULS Ta=25 C 0.002 LINEARLY WITH INCREASE IN TEMPERATURE 0.001 1 2 5 10 30 CUREVES MUST BE DERATED 100 200 500 1000 10 20 50 100 200 500 1000 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 6. 17 Revision No : 1 2/3 KTC4520F Pc - Ta COLLECTOR POWER DISSIPATION PC (W) 50 10 5 SWITCHING TIME (µS) 40 2 1 0.5 0.2 0.1 0.05 0.02 0.01 10 SWITCHING CHARACTERISTICS 30 t stg t on 20 tf 10 0 25 50 75 100 125 150 175 200 225 250 0.2 0.5 1 2 5 10 AMBIENT TEMPERATURE Ta ( C) COLLECTOR CURRENT I C (A) 2010. 6. 17 Revision No : 1 3/3