SEMICONDUCTOR
KTC8050S
TECHNICAL DATA
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE
・Complementary to KTC8550S.
E
B
L
D
L
H
MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
35
V
Collector-Emitter Voltage
VCEO
30
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
800
mA
Emitter Current
IE
-800
mA
PC *
350
mW
Tj
150
℃
Tstg
-55~150
℃
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1
Q
P
K
J
N
P
C
CHARACTERISTIC
3
G
A
2
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
2.93 +_ 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
M
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
* PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜)
Marking
h FE Rank
Type Name
Lot No.
BK
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
ICBO
VCB=15V, IE=0
-
-
50
nA
Collector-Base Breakdown Voltage
V(BR)CBO
IC=0.5mA, IE=0
35
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
30
-
-
V
hFE(1) (Note)
VCE=1V, IC=50mA
100
-
300
hFE(2)
VCE=1V, IC=350mA
60
-
-
VCE(sat)
IC=500mA, IB=20mA
-
-
0.5
V
Base-Emitter Voltage
VBE
VCE=1V, IC=500mA
-
-
1.2
V
Transition Frequency
fT
VCE=5V, IC=10mA
-
120
-
MHz
VCB=10V, f=1MHz, IE=0
-
13
-
pF
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
Note : hFE(1) Classification
2003. 3. 25
C : 100~200,
D : 150~300
Revision No : 1
1/2
KTC8050S
I C - V CE
h FE - I C
1k
COMMON EMITTER
Ta=25 C
8
800
DC CURRENT GAIN h FE
7
6
5
4
600
3
400
2
I B =1mA
200
VCE =1V
500
300
Ta=100 C
Ta=25 C
100
Ta=-25 C
50
30
0
10
0
0
1
2
3
4
5
6
1
3
10
30
100
300
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VCE(sat) - I C
I C - VBE
1
1k
1k
0.1
C
25 C
-25 C
Ta=-25 C
0.05
0.03
Ta=25 C
Ta=100 C
0.01
100
50
30
10
5 C
00
=1
Ta
Ta=-2
0.3
COMMON EMITTER
VCE =1V
500
300
Ta=25
C
0.5
C
COMMON EMITTER
I C /I B =25
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
COMMON EMITTER
Ta=
100
COLLECTOR CURRENT I C (mA)
1k
5
3
1
1
3
10
30
100
300
1k
COLLECTOR CURRENT I C (mA)
0
0.2
0.4
0.6
0.8
1.0
1.2
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR POWER DISSIPATION
Pc (mW)
Pc - Ta
500
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
400
2 Ta=25 C
1
300
200
2
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25
Revision No : 1
2/2
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