KTC9012-H-AT/PC

SEMICONDUCTOR KTC9012 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Excellent hFE Linearity. ・Complementary to KTC9013. N K E G J D MAXIMUM RATING (Ta=25℃) UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Storage Temperature Range H F F 1 2 3 C RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA 64 - 246 - -0.1 -0.25 V -0.8 -1.0 V 150 - - MHz - 7.0 - pF hFE (Note) DC Current Gain VCE=-1V, IC=-50mA VCE(sat) IC=-100mA, IB=-10mA Base-Emitter Voltage VBE IC=-100mA, VCE=-1V Transition Frequency fT Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification D:64～91, 2011. 4. 4 VCB=-6V, IC=-20mA, f=100MHz E:78～112, Revision No : 3 VCB=-6V, IE=0, f=1MHz F:96～135, G:118～166, H:144～202, I:176～246 1/1 KTC9012 hFE - IC IC - VCE (LOW VOLTAGE REGION) -7 -6 -8 -500 -5 500 COMMON EMITTER Ta=25 C DC CURRENT GAIN hFE -4 -400 -3 -300 -2 -200 IB =-1mA -100 0 0 -2 -1 -3 -4 -5 Ta =25 C Ta =-25 C 100 VCE =-1V 50 30 COMMON EMITTER -1 -3 -10 -30 -100 -300 COLLECTOR CURRENT IC (mA) VCE(sat) - IC IB - VBE -0.5 -1k COMMON EMITTER -0.3 I C /I B =10 -0.1 Ta =100 C Ta =25 C Ta =-25 C -0.03 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1K -1K COMMON EMITTER VCE =-6V -300 -100 -30 -10 -3 -1 -0.3 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (mA) COLLECTOR POWER DISSIPATION PC (mW) VCE =-6V COLLECTOR-EMITTER VOLTAGE VCE (V) -0.05 2011. 4. 4 Ta =100 C 10 -0.3 BASE CURRENT IB (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 300 Ta =1 00 C Ta =2 5 C Ta =25 C COLLECTOR CURRENT IC (mA) -600 PC - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) Revision No : 3 2/2