KTC9012S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity. Complementary to KTC9013S. 2 L KTC9012S EPITAXIAL PLANAR PNP TRANSISTOR E B L 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC * Tj Tstg RATING -40 -30 -5 -500 500 350 150 -55 150 0.6 ) UNIT V V V mA mA mW N C P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 A G H M 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 * PC : Package Mounted On 99.5% Alumina (10 8 Marking h FE Rank Lot No. Type Name BB ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification F:96 135, ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-50mA IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V VCE=-6V, IC=-20mA, f=100MHz VCB=-6V, IE=0, f=1MHz H:144 202, I:176 246 150 MIN. 96 TYP. -0.1 -0.8 7.0 MAX. -0.1 -0.1 246 -0.25 -1.0 V V MHz pF UNIT A A SYMBOL ICBO IEBO hFE (Note) VCE(sat) VBE fT Cob G:118 166, 2002. 9. 3 Revision No : 0 J D 1/1