KTC9013

KTC9013

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTC9013 - EPITAXIAL PLANAR NPN TRANSISTOR - KEC(Korea Electronics)

  • 详情介绍
  • 数据手册
  • 价格&库存
KTC9013 数据手册
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTC9013 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES ・Complementary to KTC9012. N K D G E A ・Excellent hFE Linearity. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING 40 30 5 500 -500 625 mW 400 150 -55~150 ℃ ℃ UNIT V V M H F F V mA mA L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification D:64~91, SYMBOL ICBO IEBO hFE (Note) VCE(sat) VBE fT Cob E:78~112, TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=50mA IC=100mA, IB=10mA IC=100mA, VCE=1V VCB=6V, IC=20mA, f=100MHz VCB=6V, IE=0, f=1MHz G:118~166, H:144~202, 140 I:176~246 MIN. 64 TYP. 0.1 0.8 7.0 MAX. 0.1 0.1 246 0.25 1.0 V V MHz pF UNIT μ A μ A F:96~135, 2010. 6. 25 Revision No : 2 1/1 KTC9013 IC - VCE (LOW VOLTAGE REGION) COLLECTOR CURRENT IC (mA) 500 400 300 200 100 0 6.0 4.0 hFE - IC 500 DC CURRENT GAIN hFE COMMON EMITTER Ta=25 C 3.0 2.0 300 Ta =100 C VCE =6V 100 50 30 Ta =25 C C Ta =-25 VCE =1V 1.0 0.5 I B =0.1mA COMMON EMITTER 0 1 2 3 4 5 10 0.5 1 3 10 30 100 300 1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 COMMON EMITTER I C /I B =10 IB - VBE 2K COMMON EMITTER VCE =6V BASE CURRENT IB (µA) 1K 500 300 100 50 30 10 5 0 Ta = 100 C 5C Ta =2 0.1 Ta =100 C 0.05 0.03 0.5 1 3 10 30 Ta =25 C Ta =-25 C 100 300 1K 0.2 0.4 0.6 Ta =-2 5C 0.8 1.0 1.2 COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION PC (mW) PC - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 Fe Cu AMBIENT TEMPERATURE Ta ( C) 2010. 6. 25 Revision No : 2 2/2
KTC9013
物料型号: - KTC9013

器件简介: - KTC9013是一种NPN型晶体管,适用于通用和开关应用。

引脚分配: - 1. EMITTER(发射极) - 2. BASE(基极) - 3. COLLECTOR(集电极)

参数特性: - 最大额定值(Ta=25℃): - 集电极-基极电压(VCBO):40V - 集电极-发射极电压(VCEO):30V - 发射极-基极电压(VEBO):5V - 集电极电流(Ic):500mA - 发射极电流(IE):-500mA(注意:负号表示电流方向) - 集电极功耗(Pc):400mW(铜引线框架)/ 625mW(铁引线框架) - 结温(T):150℃ - 存储温度范围(Tstg):-55℃至150℃

功能详解: - 该晶体管具有优秀的hFE线性,与KTC9012互补。 - 电气特性(Ta=25℃): - 集电极截止电流(ICBO):最大0.1μA - 发射极截止电流(IEBO):最大0.1μA - DC电流增益(hFE):最小64,典型值未给出,最大246 - 集电极-发射极饱和电压(VCE(sat)):最小0.1V,最大0.25V - 基极-发射极电压(VBE):0.8V至1.0V - 过渡频率(fr):140MHz - 集电极输出电容(Cab):7.0pF

应用信息: - 适用于通用和开关应用。

封装信息: - TO-92封装。
KTC9013 价格&库存

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KTC9013S-H-RTK/P
  •  国内价格
  • 50+0.06327
  • 600+0.06232
  • 1200+0.06045
  • 3000+0.05773

库存:2900