KTC9014S-C-RTK/P

SEMICONDUCTOR KTC9014S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). D ・Excellent hFE Linearity 2 H A 3 G ・Low Noise :NF=1dB(Typ.) at f=1kHz. ・Complementary to KTC9015S. 1 Q CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current IC 150 mA Emitter Current IE -150 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range J K MAXIMUM RATING (Ta=25℃) P N C P DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) Marking h FE Rank Type Name Lot No. BD ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 50 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA 100 - 1000 - 0.1 0.25 V 60 - - MHz hFE (Note) DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) fT Transition Frequency VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF Noise Figure NF VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz - 1.0 10 dB Note : hFE Classification B:100～300, 2003. 3. 25 C:200～600, Revision No : 1 D:400～1000 1/2 KTC9014S 240 3.0 2.0 160 1.0 120 0.5 80 I B =0.2mA 40 VCE =6V Ta =100 C Ta =25 C Ta =-25 C 100 50 30 VCE =1V 1 2 3 4 5 10 6 TRANSITION FREQUENCY f T (MHz) I C /I B =10 0.05 Ta =100 C Ta =25 C Ta =-25 C 0.03 0.01 0.3 1 3 10 30 100 300 10 30 100 500 300 100 50 30 10 -0.1 COMMON EMITTER VCE =10V Ta =25 C -0.3 -1 -3 -10 -30 I B - VBE Pc - Ta COLLECTOR POWER DISSIPATION Pc (mW) EMITTER CURRENT I E (mA) 300 Ta =1 30 10 5 C Ta = -25 C 00 C 100 3 1 0.3 0.2 0.4 0.6 0.8 1.0 BASE-EMITTER VOLTAGE VBE (V) Revision No : 1 1.2 300 1K COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =6V 0 3 f T - IE 0.1 2K 1K 1 VCE(sat) - I C COMMON EMITTER 0.1 0.3 COLLECTOR CURRENT I C (mA) 0.5 0.3 0.1 COLLECTOR-EMITTER VOLTAGE VCE (V) Ta = 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0 2003. 3. 25 300 COMMON EMITTER 0 0 BASE CURRENT I B (µA) 500 COMMON EMITTER Ta=25 C 5.0 6.0 200 h FE - I C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) I C - VCE (LOW VOLTAGE REGION) -100 -300 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2/2