KTC9018S-H-RTK/P

SEMICONDUCTOR KTC9018S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. E B L L 3 G H A 2 1 RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 mA Emitter Current IE -20 mA PC * 350 mW Tj 150 Tstg -55 150 Collector Power Dissipation Junction Temperature Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 J C SYMBOL K CHARACTERISTIC ) P N P MAXIMUM RATING (Ta=25 D FEATURES Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. High Transition Frequency : fT=800MHz(Typ.). DIM A B C D E G H J K L M N P MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 ) Marking h FE Rank Lot No. BG Type Name ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=40V, IE=0 - - 0.1 A Emitter Cut-off Current IEBO VEB=4V, IC=0 - - 0.1 A 54 - 198 - - 1.0 pF 500 800 - MHz - - 30 pS - - 4.0 15 - - hFE (Note) DC Current Gain VCE=5V, IC=1mA Reverse Transfer Capacitance Cre VCE=6V, f=1MHz, IE=0 Transition Frequency fT VCE=10V, IC=8mA, f=100MHz CC rbb' Collector-Base Time Constant Noise Figure NF Power Gain Gpe Note : hFE Classification 2003. 3. 25 F:54 80, G:72 Revision No : 1 108, VCE=6V, IE=-1mA, f=30MHz VCE=6V, IE=-1mA, f=100MHz H:97 146, dB I:130 198 1/3 KTC9018S h FE - I C 300 500 450 400 350 300 250 20 16 12 200 150 100 VCE =6V 8 4 I B =50µA 0 0 BASE-EMITTER VOLTAGE VBE (V) DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) STATIC CHARACTERISTICS COMMON EMITTER VCE =6V Ta=25 C 100 50 30 0.2 10 0.1 0.4 0.6 600 400 200 0 10 20 30 1 3 5 10 20 COLLECTOR CURRENT I C (mA) COMMON EMITTER Ta=25 C VCE =6V 0.8 0.3 0.5 40 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE CURRENT I B ( µA) -50 -30 -10 -5 100 FORWARD TRANSFER ADMITANCE yfe (m ) -100 Ω PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE θ fe ( ) yfe , θ fe - I E yfe 50 30 θ fe COMMON EMITTER VCE =6V 10 f=100MHz 5 -0.2 Ta=25 C -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) C ie , g ie - I E C oe , g oe - I E OUPUT CONDUCTANCE g oe (µ ) OUPUT CAPACITANCE C oe (pF) 5 3 1 0.5 100 Ω Ω 10 30 COMMON EMITTER VCE =6V f=100MHz Ta=25 C INPUT CAPACITANCE C ie (pF) INPUT CONDUCTANCE g ie (m ) 300 30 g oe 50 30 C oe 10 5 -0.2 -0.3 -1 -3 -5 EMITTER CURRENT I E (mA) 2003. 3. 25 Revision No : 1 -10 C ie 10 g ie 5 COMMON EMITTER VCE =6V f=100MHz Ta=25 C 3 1 -0.2 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) 2/3 KTC9018S yfe - f f=200MHz 1600 1200 100 800 400 0 COMMON EMITTER VCE =6V 50 I E =-1mA 27 10.7 Ta=25 C 20 0 40 60 -10 COMMON EMITTER VCE =6V f=10.7MHz 27 50 I E =-1mA Ta=25 C 100 Ω 150 0 80 100 120 150 -20 200 -30 -40 0 10 20 Ω 20 Ω INPUT SUSCEPTANCE b ie (m ) f=10.7MHz 27 COMMON EMITTER VCE =6V 50 I E =-1mA Ta=25 C 100 Ω REVERSE TRANSFER SUSCEPTANCE b re (µ ) y ie - f 0 -400 150 -600 200 -160 -120 50 Ω y re - f -800 -200 40 FORWARD TRANSFER CONDUCTANCE g fe (m ) OUTPUT CONDUCTANCE g oe (µ ) -200 30 -80 -40 0 REVERSE TRANSFER CONDUCTANCE g re (µ ) f=200MHz 16 150 12 100 8 COMMON EMITTER VCE =6V 4 0 50 27 10.7 0 I E =-1mA Ta=25 C 5 10 15 20 25 30 Ω Ω OUTPUT SUSCEPTANCE b oe (µ ) 2000 FORWARD TRANSFER SUSCEPTANCE b fe (m ) y oe - f INPUT CONDUCTANCE g ie (m ) Ω COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 25 Revision No : 1 3/3