KTC9018_10

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. B KTC9018 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES ・Small Reverse Transfer Capacitance : Cre=0.65pF(Typ.). ・Low Noise Figure : NF=2.2dB(Typ.) at f=100MHz. ・High Transition Frequency : fT=800MHz(Typ.). A N K D G E MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING 40 30 4 20 -20 625 mW 400 150 -55～150 ℃ ℃ UNIT V L F H F V V mA mA M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Collector-Base Time Constant Noise Figure Power Gain Note : hFE Classification E:40～59, F:54～80, SYMBOL ICBO IEBO hFE (Note) Cre fT CC・rbb' NF Gpe VCE=6V, IE=-1mA, f=100MHz H:97～146, I:130～198 TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1mA VCE=6V, f=1MHz, IE=0 VCE=10V, IC=8mA, f=100MHz VCE=6V, IE=-1mA, f=30MHz MIN. 40 500 15 TYP. 800 MAX. 0.1 0.1 198 1.0 30 4.0 dB pF MHz pS UNIT μ A μ A G:72～108, 2010. 6. 25 Revision No : 1 1/1