KTD1028

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES High DC Current Gain : hFE=800 3200 (VCE=5.0V, IC=300mA). Wide Area of Safe Operation. Low Collector Saturation Voltage. : VCE(sat)=0.17V (IC=500mA, IB=5.0mA). KTD1028 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 8 1.0 200 1 150 -55 150 UNIT V V V A mA W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain hFE(2) Collector-Emitter Saturration Voltage Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Base-Emitter Voltage Note: hFE Classification A:800 1600, VCE(sat) VBE(sat) Cob fT VBE B:1200 2400, VCE=5.0V, IC=1.0A IC=500mA, IB=5.0mA IC=500mA, IB=5.0mA VCB=10V, IE=0, f=1.0MHz VCE=10V, IC=500mA VCE=5V, IC=100mA C:2000 3200 400 150 0.17 0.80 18 250 630 0.30 1.2 30 700 V V pF MHz mV SYMBOL ICBO IEBO hFE(1) (Note) TEST CONDITION VCB=60V, IE=0 VEB=8V, IC=0 VCE=5.0V, IC=300mA MIN. 800 TYP. 1500 MAX. 100 100 3200 UNIT nA nA 2008. 3. 11 Revision No : 3 1/2 KTD1028 2008. 3. 11 Revision No : 3 2/2