KTD1304-RTK/P

SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES ・High Emitter-Base Voltage : VEBO=12V(Min.). E B L L ・High Reverse hFE ・Low on Resistance : RON=0.6Ω(Max.) (IB=1mA). D : Reverse hFE=20(Min.) (VCE=2V, IC=4mA). 3 H G A 2 1 Q P UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 12 V Collector Current IC 300 mA Base Current IB 30 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ J RATING K SYMBOL P N CHARACTERISTIC C MAXIMUM RATING (Ta=25℃) DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR Storage Temperature Range SOT-23 Marking Lot No. MAX Type Name ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=25V, IE=0 - - 0.1 μA Emitter Cut-off Current IEBO VEB=12V, IC=0 - - 0.1 μA hFE1 (FOR) VCE=2V, IC=4mA 200 - 800 hFE2 (REV) VCE=2V, IC=4mA 20 - - DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - - 0.25 V Base-Emitter Saturation Voltage VBE(sat) IC=100mA, IB=10mA - - 1 V VCE=10V, IC=1mA - 60 - MHz fT Transition Frequency Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 10 - pF On Resistance Ron f=1KHz, IB=1mA, Vin=0.3V - 0.6 - Ω 2011. 6. 29 Revision No : 3 1/2 KTD1304 C ob - VCB COLLECTOR OUTPUT CAPACITANCE C ob (pF) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VCE(sat) - I C 1 I C /I B =25 0.5 0.3 Ta=25 C 0.1 0.05 Ta=75 C 0.03 0.01 0.01 Ta=-25 C 0.03 0.1 0.3 24 I E =0 Ta=25 C f=1MHz 20 16 12 8 4 0 1 1 COLLECTOR CURRENT I C (A) 3 5 1k ON RESISTANCE R on (Ω) DC CURRENT GAIN h FE VCE =2V 1k 800 600 400 200 0.003 0.01 0.03 50 100 R on - I B 1.2k 0.1 COLLECTOR CURRENT I C (A) 2011. 6. 29 30 COLLECTOR-BASE VOLTAGE VCB (V) h FE - I C 0 0.001 10 Revision No : 3 0.3 1 1k‫װ‬ I B =1mA 300 f=1kHz 100 VB VV VA 30 R ON = ~ V=0.3V VB ź1000 (‫)װ‬ VA VB 10 3 1 0.3 0.1 0.01 0.03 0.1 0.3 1 3 10 BASE CURRENT IB (mA) 2/2