KTD1347

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB985. F H C KTD1347 EPITAXIAL PLANAR NPN TRANSISTOR B D A Adoption of MBIT processes. P DEPTH:0.2 S Q K DIM A B C D E F G H J K L M N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4 G J F H M E M L R H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature Range ) VCBO VCEO VEBO IC ICP PC Tj Tstg 60 50 6 3 6 1 150 -55 150 V V V A A W O SYMBOL RATING UNIT 1 N 2 3 N H 1. EMITTER 2. COLLECTOR 3. BASE 25 1.25 Φ1.50 0.10 MAX _ 12.50 + 0.50 1.00 TO-92L ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time ICBO IEBO ) TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 VCE=2V, IC=3A IC=2A, IB=100 IC=2A, IB=100 VCE=10V, IC=50 VCB=10V, IE=0, f=1 PW=20µs DC < 1% = INPUT I B1 R8 I B2 25 SYMBOL MIN. 100 35 - D TYP. 0.19 0.94 150 25 70 650 35 MAX. 1 1 400 0.5 1.2 - UNIT. hFE (1) (Note) hFE (2) VCE(sat) VBE(sat) fT Cob ton tstg tf V V VR 50 nS 100µ -5V 10IB1=-10I B2 =I C =1A 470µ 25V - Note : hFE (1) Classification A:100 200, B:140 280, C:200 400 1999. 11. 30 Revision No : 1 1/3 KTD1347 I C - VCE 5.0 COLLECOTR CURRENT I C (A) 4.0 3.0 2.0 1.0 0 0 0.4 0.8 1.2 1.6 COLLECTOR CURRENT I C (A) 100mA 80mA 60mA 40mA 20mA 10mA 5mA I C - V BE 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 Ta=7 5C 25 C -25 C VCE =2V I B =0 COLLECTOR-EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE V BE (V) I C - VCE 2.0 COLLECTOR CURRENT I C (A) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 2 4 6 8 10 12 14 16 8mA h FE - I C 1k DC CURRENT GAIN h FE 500 300 VCE =2V 7mA 6mA 5mA 4mA 3mA 2mA 1mA I B =0 100 50 30 18 20 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V BE(sat) - I C BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) I C /I B =20 V CE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1K 500 300 I C /I B =20 10 5 3 1 0.5 0.3 Ta=25 C Ta=-25 C Ta=75 C 100 50 30 Ta=-25 C Ta=75 C Ta=25 C 0.1 0.01 0.03 0.1 0.3 1 3 10 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 1999. 11. 30 Revision No : 1 2/3 KTD1347 C ob - VCB GAIN-BANDWIDTH PRODUCT f T (MHz) OUTPUW CAPACITANCE Cob (pF) 100 50 30 f=1MHz fT - IC 1k 500 300 VCE =10V 10 5 3 100 50 30 1 1 3 5 10 30 50 100 200 COLLECTOR BASE VOLTAGE VCB (V) 10 0.01 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (A) Pc - Ta COLLECTOR DISSIPATION PC (W) 1.8 COLLECTOR CURRENT I C (A) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.02 0.1 SAFE OPERATING AREA I CP 10 s 1m s m 10 s I C MAX. 0m D C O pe ra tio n Ta=25 C ONE PULSE 0.3 1 3 10 30 100 COLLECTOR EMITTER VOLTAGE V CE (V) 1999. 11. 30 Revision No : 1 3/3