KTD1413_07

SEMICONDUCTOR TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. S KTD1413 EPITAXIAL PLANAR NPN TRANSISTOR A F C FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. E G B DIM A B C D E F G H J K L M N P Q R H S K L L R M MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEB0 IC IB PC Tj Tstg RATING 150 100 7 5 0.5 25 150 -55 150 UNIT V V D D MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ N N 1 2 3 Q V A A W J 1. BASE 2. COLLECTOR 3. EMITTER Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE ~ = 3KΩ ~ = 300Ω EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) Saturation Voltage Collector-Emitter Base-Emitter Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) ton tstg tf ) TEST CONDITION VCB=100V, IE=0 IC=10mA, IB=0 VCE=2V, IC=3A VCE=2V, IC=5A IC=3A, IB=3mA IC=3A, IB=3mA 20µS I B1 I B2 I B1 =-I B2 =3mA DUTY CYCLE 1% VCC =50V OUTPUT 16.7Ω SYMBOL ICBO V(BR)CEO hFE(1) MIN. 100 2000 500 - P TYP. 6000 0.9 1.6 1.0 3.5 1.2 MAX. 1 15000 1.5 UNIT mA V V 2.0 - INPUT I B1 I B2 S 2007. 5. 22 Revision No : 1 1/2 KTD1413 I C - V CE 5 COLLECTOR CURRENT I C (A) 1.0mA h FE - I C 10000 COMMON EMITTER 5000 VCE =2V 3000 1000 500 300 100 50 30 10 0. 7m COMMON EMITTER Tc=25 C A 4 3 2 0.5mA 0.4mA 0.35mA 1 I B =0.3mA 0 0 1 2 3 4 5 DC CURRENT GAIN h FE 0.01 0.03 0.1 0.3 1 3 5 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C 100 50 30 10 5 3 1 0.5 0.3 0.1 0.01 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COMMON EMITTER I C /I B=1000 VBE(sat) - I C 100 50 30 10 5 3 1 0.5 0.3 0.1 0.01 COMMON EMITTER IC /I B =1000 0.03 0.1 0.3 0.5 1 3 5 10 0.03 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 10 5.0 3.0 1.0 0.5 0.3 0.1 0.05 0.03 0.01 COLLECTOR POWER DISSIPATION PC (W) SAFE OPERATING AREA *P W P C - Ta 40 Tc=Ta INFINITE HEAT SINK µS 00 S *3 1m * mS *3 I C MAX. (PULSED) =1 00 µS *10mS 30 * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE VCEO MAX. *1 00 m S 20 10 1 3 5 10 30 50 100 300 1000 0 50 100 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) 2007. 5. 22 Revision No : 1 2/2