KTD1415_07

SEMICONDUCTOR TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. S KTD1415 EPITAXIAL PLANAR NPN TRANSISTOR A F C FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=3V, IC=3A. Low Saturation Voltage : VCE(sat)=1.5V(Max.) at IC=3A. E G B DIM A B C D E F G H J K L M N P Q R H S K L L R M MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 100 5 7 0.2 30 150 -55 150 UNIT V V D D MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ N N 1 2 3 Q V A A W J 1. BASE 2. COLLECTOR 3. EMITTER Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE ~ = 5KΩ ~ = 150Ω EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ) TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=3V, IC=3A VCE=3V, IC=7A IC=3A, IB=6mA IC=7A, IB=14mA IC=3A, IB=6mA 20µS I B1 INPUT I B1 I B2 I B2 I B1 =-I B2 =6mA DUTY CYCLE 1% VCC =45V OUTPUT 15Ω SYMBOL ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat)(1) MIN. 100 2000 1000 - P TYP. 0.9 1.2 1.5 0.8 3.0 2.5 MAX. 100 3.0 15000 1.5 UNIT A mA V Collector-Emitter Saturation Voltage VCE(sat)(2) Base-Emitter Saturation Voltage Turn-on Time Switching Time Storage Time Fall Time VBE(sat) ton tstg tf 2.0 2.5 - V V S 2007. 5. 22 Revision No : 1 1/3 KTD1415 I C - V CE 10 COLLECTOR CURRENT I C (A) 8 1.4 1.2 Tc=25 C I C - VCE 10 COLLECTOR CURRENT I C (A) 8 1.0 0.8 COMMON EMITTER Tc=100 C COMMON EMITTER 6 4 2 0 0 2 4 6 1.0 0.8 0.6 0.4 I B =0.2mA 0 6 4 0.6 0.4 I B=0.2mA 2 0 0 8 10 12 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V CE 10 COLLECTOR CURRENT I C (A) 8 4.0 COMMON EMITTER h FE - I C 20000 DC CURRENT GAIN h FE 10000 5000 3000 Tc =1 00 25 Tc=-50 C 3.5 3.0 2.5 2.0 COMMON EMITTER VCE =3V C 6 4 2 0 0 2 1.5 1.0 I B =0.5mA 0 1000 500 300 -50 4 6 8 10 12 0.3 1 3 10 30 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 3 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COMMON EMITTER I C /I B =500 V BE(sat) - I C 10 COMMON EMITTER I C /I B =500 5 3 Tc=100 C 25 1 Tc=100 C 25 0.5 0.3 0.4 -50 1 -50 0.5 1 3 5 10 20 0.4 1 3 5 10 20 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2007. 5. 22 Revision No : 1 2/3 KTD1415 I C - V BE 7 COLLECTOR CURRENT I C (A) 6 5 4 3 2 1 0 0 0.4 0.8 1.2 1.6 COMMON EMITTER V CE =3V r th - t w TRANSIENT THERMAL RESISTANCE r th ( C/W) CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SIGLE NONREPETITIVE PULSE) 1 INFINITE HEAT SINK 2 NO HEAT SINK Tc=10 0 C 25 -50 100 1 10 2 1 0.1 0.001 0.01 0.1 1 10 100 1000 2.0 2.4 2.8 3.2 BASE-EMITTER VOLTAGE V BE (V) PULSE WIDTH t w (sec) SAFE OPERATING AREA 10 5 COLLECTOR CURRENT I C (A) 3 I C MAX.(PULSED) 10 I C MAX. (CONTINUOUS) 10 10 1m S 0µ 0m m S S S TI RA PE OC C5 D c=2 T O N 1 0.5 0.3 SINGLE NONREPETITIVE PULSE Tc=25 C 0.1 CURVES MUST BE DERATED 0.05 LINEARLY WITH INCREASE IN TEMPERATURE 0.03 1 3 10 30 100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 5. 22 Revision No : 1 VCEO MAX. 3/3