KTD1624_08

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTB1124. KTD1624 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation ) SYMBOL VCBO VCEO VEBO IC ICP IB PC PC* RATING 60 50 6 3 6 600 500 1 150 -55 2 UNIT V V V A A mA mW W Junction Temperature Storage Temperature Range Tj Tstg 150 * : Package mounted on ceramic substrate(250mm 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain hFE (2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time VCE(sat) VBE(sat) fT Cob ton VCE=2V, IC=3A IC=2A, IB=100 IC=2A, IB=100 VCE=10V, IC=50 VCB=10V, f=1 , IE=0 35 0.19 0.94 150 25 70 0.5 1.2 V V SYMBOL ICBO IEBO hFE(1) (Note) TEST CONDITION VCB=40V, IE=0 VEB=4V, IC=0 VCE=2V, IC=100 MIN. 100 TYP. MAX. 1 1 400 UNIT. Storage Time tstg - 650 - nS Fall Time Note : hFE (1) Classification A:100 200, tf B:140 280, C:200 400 - 35 - 2008. 3. 11 Revision No : 5 1/3 KTD1624 2008. 3. 11 Revision No : 5 2/3 KTD1624 2008. 3. 11 Revision No : 5 3/3