KTD1882

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING B KTD1882 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES Complementary to KTB1772. K D E G A N MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current (DC) Collector Power Dissipation Junction Temperature Storage Temperature Range Note : Pulse Width DC Pulse (Note) ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 40 30 5 3 7 0.6 625 150 -55 150 UNIT V V M H F F V A A mW L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 10mS, Duty Cycle 50%. ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter-Cut-off Current DC Current Gain * * * ) TEST CONDITION VCB=30V, IE=0 VEB=3V, IC=0 VCE=2V, IC=20mA VCE=2V, IC=1A IC=2A, IB=0.2A IC=2V, IB=0.2A VCE=5V, IC=0.1A VCB=10V, IE=0, f=1MHz 320 , GR:200 400 MIN. 30 100 TYP. 150 160 0.3 1.0 90 45 MAX. 1 1 400 0.5 2.0 V V MHz pF UNIT A A SYMBOL ICBO IEBO hFE(1) hFE(2) (Note) VCE(sat) VBE(sat) fT Cob Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Collector Output Capacitance Note: hFE(2) Classification * Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed O:100 200 , Y:160 2000. 12. 8 Revision No : 0 1/2 KTD1882 I C - V CE 2.0 COLLECTOR CURRENT I C (A) 1.6 1.2 0.8 0.4 0 0 4 8 12 DC CURRENT GAIN h FE I B=10mA I B=9mA I B=8mA IB =7mA I B=6mA I B=5mA I B=4mA I B=3mA I B=2mA I B=1mA h FE - I C 1K 500 300 100 50 30 10 5 3 1 0 1 3 5 10 30 50 100 300 1K 3K 5K COLLECTOR CURRENT I C (mA) VCE =2V 16 2 COLLECTOR-EMITTER VOLTAGE V CE (V) SATURATION VOLTAGE VCE(sat), V BE(sat) (mV) V CE(sat) ,VBE(sat) - I C 1K 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 I C /IB =10 VCE (sat) VBE (sat) CURRENT GAIN BANDWIDTH PRODUCT f T (MHz) fT - IC 1K 500 300 100 50 30 10 5 3 1 0.01 VCE =5V 1K 3K 0.03 0.1 0.3 1 3 10 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (A) C ob - V CB 500 300 100 50 30 10 5 3 1 1 3 10 30 100 300 1K 3K COLLECTOR-BASE VOLTAGE V CB (V) f=1MHz I E =0 P C - Ta COLLECTOR POWER DISSIPATION PC (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 1K CAPACITANCE C ob (pF) AMBIENT TEMPERATURE Ta ( C) 2000. 12. 8 Revision No : 0 2/2