KTD1937

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER. A KTD1937 EPITAXIAL PLANAR NPN TRANSISTOR C High hFE : 500 1500(IC=1A). E G B Low Saturation :VCE(sat)=0.35V(Max.) (IC=5A). P FEATURES S DIM A B C D E F G H J K L M N P Q R H S K L L R MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEB0 IC ICP IB PC 40 Tj Tstg 150 -55 150 RATING 100 80 7 10 A 15 2 2 W A UNIT V V V 1 2 3 N N D M D J MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Forward Voltage Transition Frequency Collector Output Capacitance Turn-on Time ICBO IEBO ) TEST CONDITION VCB=80V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=1V, IC=1A VCE=1V, IC=5A IC=5A, IB=0.05A IC=5A, IB=0.05A IE=5A, IB=0 VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz OUTPUT 20µsec IB1 0 IB2 I B2 6Ω INPUT I B1 SYMBOL MIN. 80 500 150 - TYP. 70 160 0.6 MAX. 10 10 1500 0.35 1.2 2.7 - UNIT A A V V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE(sat) VECF fT Cob ton tstg tf V V V MHz pF Switching Time Storage Time - 6.0 - S Fall Time IB1=-I B2 =0.05A DUTY CYCLE < 1% VCC =30V - 1.0 - 2007. 5. 22 Revision No : 3 1/2 KTD1937 16 COLLECTOR CURRENT I C (A) 80 60 50 40 30 20 15 COMMON EMITTER Tc=25 C COLLECTOR-EMITTER VOLTAGE VCE (V) I C - V CE V CE - I C 1.2 1.0 0.8 0.6 0.4 0.2 0 200 300 I B=5mA 10 20 COMMON EMITTER Tc=25 C 40 60 80 100 150 12 8 10 6 4 0 I B=2mA 4 0 0 4 8 12 16 0 2 4 6 8 10 12 14 16 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) TRANSIENT THERMAL RESISTANCE r th ( C/W) h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER VCE =1V r th - t w CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) (1) 1k 500 300 Tc=100 C Tc=25 C Tc=-25 C 100 10 1 (2) 100 50 30 0.1 0.3 1 3 5 10 30 0.1 0.001 0.01 0.1 1 10 100 1k PULSE WIDTH tw (S) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA 30 VCE(sat) - I C COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 3 COMMON EMITTER I C /I B =100 I C MAX.(PULSED) * µS * 100 10 5 3 1 0.5 0.3 0.1 0.05 0.02 I C MAX. (CONTINUOUS) 10 0m 1m S* mS 10 * S 1 0.5 0.3 0.1 0.05 0.03 Tc= 100 C Tc=25 C Tc=-25 C * SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.01 0.1 0.3 1 3 10 30 COLLECTOR CURRENT I C (A) 1 3 10 30 100 VCEO MAX. COLLECTOR-EMITTER VOLTAGE VCE (V) * N IO AT ER C OP =25 DC Tc 300 2007. 5. 22 Revision No : 3 2/2