KTD2092_07

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A KTD2092 EPITAXIAL PLANAR NPN TRANSISTOR C High hFE : hFE=500 1500 (IC=0.5A). Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). E G B P FEATURES S DIM A B C D E F G H J K L M N P Q R H S K L L R MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC 25 Tj Tstg 150 -55 150 RATING 100 80 7 3 A 5 1 2 W A UNIT V V V 1 2 3 N N D M D J MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F Q 1. BASE 2. COLLECTOR 3. EMITTER TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain ) TEST CONDITION VCB=80V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=1V, IC=0.5A VCE=1V, IC=1A IC=1A, IB=0.01A IC=1A, IB=0.01A IE=3A, IB=0 VCE=5V, IC=1A VCE=10V, IE=0, f=1MHz OUTPUT 20µsec IB1 0 IB2 I B2 30Ω INPUT I B1 SYMBOL ICBO IEBO V(BR)CEO hFE(1) hFE(2) MIN. 80 500 150 - TYP. 140 30 0.5 5.0 0.7 MAX. 10 10 1500 0.35 1.2 2.5 - UNIT A A V Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Forward Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) VECF fT Cob ton Tstg tf V V V MHz pF S IB1=-I B2 =10mA DUTY CYCLE < 1% VCC =30V 2007. 5. 22 Revision No : 3 1/2 KTD2092 I C - VCE COLLECTOR CURRENT I C (A) 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 2 4 6 8 0 2 1.4 1 0.5 IB =0.2mA 20 10 4 COMMON EMITTER Ta=25 C h FE - I C 3k DC CURRENT GAIN h FE COMMON EMITTER Tc=25 C 1k 500 300 V CE =2V VCE =5V 100 50 0.05 VCE =1V 10 12 14 16 0.1 0.3 1 3 5 10 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (A) h FE - I C 3k COMMON EMITTER VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3 COMMON EMITTER I C /I B =100 DC CURRENT GAIN h FE Tc=100 C V CE =1V 1 0.5 0.3 = Tc 0 10 C 1k 500 300 Tc=25 C Tc=-55 C VCE =2V VCE =1V VCE =5V 0.1 0.05 0.02 0.05 Tc=25 C Tc=-55 C 100 50 0.05 0.1 0.3 1 3 5 10 0.1 0.3 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) r th - t w TRANSIENT THERMAL RESISTANCE r th ( C/W) CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. COMMON EMITTER(SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) (1) SAFE OPERATING AREA 20 COLLECTOR CURRENT I C (A) 10 5 3 I C MAX.(PULSED) 10 S 0µ 100 10 10 I C MAX. (CONTINUOUS) S S 1m 0m N 10 IO AT mS ER 5 C OPc=2 DC T 1 0.5 0.3 (2) 1 0.1 0.001 0.01 0.1 1 10 100 1k 0.1 0.05 0.02 1 PULSE WIDTH t w (S) 3 10 30 100 VCEO MAX. SINGLE NONREPETIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 3 2/2