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KTD2686

KTD2686

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTD2686 - DARLINGTON TRANSISTOR - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
KTD2686 数据手册
S EMICONDUCTOR TECHNICAL DATA DARLINGTON TRANSISTOR. SOLENOID DRIVER. MOTOR DRIVER. A KTD2686 EPITAXIAL PLANAR NPN TRANSISTOR FEATURES High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) C H G J B E MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range t=10S DC DC Pulse ) RATING 50 60 8 1 3 0.5 2.5 1 150 -55 150 10 UNIT V V V A A W D K F F D SYMBOL VCBO VCEO VEBO IC ICP IB PC * Tj Tstg 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 * Pc : Package mounted on FR4 board (Cu area : 645 , glass epoxy, t=1.6 ) EQUIVALENT CIRCUIT COLLECTOR Marking Lot No. Type Name A2 BASE ∼ 5kΩ − ∼ 300Ω − EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Turn On Time Switching Time Storage Time Fall Time SYMBOL ICBO ICEO IEBO V(BR)CEO hFE VCE(sat)1 VCE(sat)2 VBE(sat) ton 20µs TEST CONDITION VCB=45V, IE=0 VCE=45V, IB=0 VEB=8V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A IC=0.5A, IB=1mA IC=1A, IB=1mA IC=1A, IB=1mA VCC =30V 30Ω 5V 0V DUTY CYCLE < 1% = INPUT MIN. 0.8 50 2000 OUTPUT TYP. 60 0.4 4.0 0.6 MAX. 10 10 4 70 1.2 1.5 2.0 - UNIT A A mA V V V tstg tf - S 2004. 11. 22 Revision No : 1 1/2 KTD2686 I C - V CE 3.2 COLLECTOR CURRENT IC (A) 3 I C - V BE COLLECTOR CURRENT IC (A) COMMON EMITTER Ta=25 C 1 3.2 0.5 0.3 2.4 2.4 COMMON EMITTER VCE =2V 1.6 0.22 1.6 Ta=2 5C 0.20 0.8 I B =0.18mA 0.8 Ta=100 C Ta=-55 C 0 0 2 4 6 8 0 0 0.8 1.6 2.4 3.2 COLLECTOR EMITTER VOLTAGE V CE (V) BASE EMITTER VOLTAGE VBE (V) h FE - I C COLLECTOR EMITTER SATURATION VOLTAGE VCE(sat) (V) 10000 DC CURRENT GAIN h FE COMMON 5000 EMITTER VCE =2V 00 =1 Ta C V CE(sat) - I C 10 5 3 COMMON EMITTER I C /I B =500 3000 1000 500 300 C C 25 a= -55 T = Ta 1 0.5 0.3 0.1 Ta=-55 C Ta=25 C 0C Ta=10 100 0.03 0.05 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) SAFE OPERATING AREA V BE(sat) - I C COLLECTOR EMITTER SATURATION VOLTAGE VBE(sat) (V) 10 5 3 Ta=55 C Ta=25 C Ta=100 C 10 COLLECTOR CURRENT I C (A) COMMON EMITTER I C /I B =500 I C MAX(Pulse) ms *1 s 0m *1 1 I C MAX(Continuous) DC Op 1 0.5 0.3 era tio 0.1 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) 0.01 0.1 (* SINGLE NONREPETITIVE PULSE Ta=25 C ) CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE MOUNTED ON FR4 BOARD (Cu area : 645 mm2, glass epoxy, t=1.6mm) n 1 10 100 COLLECTOR EMITTER VOLTAGE V CE (V) 2004. 11. 22 Revision No : 1 2/2
KTD2686 价格&库存

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