KTD2854

SEMICONDUCTOR TECHNICAL DATA MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION. FEATURES High DC Current Gain : hFE=2000(Min.) (VCE=2V, IC=1A) P DEPTH:0.2 C KTD2854 EPITAXIAL PLANAR NPN TRANSISTOR B D A Low Saturation Voltage : VCE(sat)=1.5V(Max.) (IC=1A, IB=1mA) Complementary to KTB2234. S Q K DIM A B C D E F G H J K L M N O P Q R S MILLIMETERS 7.20 MAX 5.20 MAX 0.60 MAX 2.50 MAX 1.15 MAX 1.27 1.70 MAX 0.55 MAX _ 14.00 + 0.50 0.35 MIN _ 0.75 + 0.10 4 G J F H M E F H M L R H MAXIMUM RATINGS (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 100 100 8 2 3 0.5 1 150 -55 150 UNIT V V V O N 1 2 3 N H 1. EMITTER 2. COLLECTOR 3. BASE 25 1.25 Φ1.50 0.10 MAX _ 12.50 + 0.50 1.00 TO-92L A A W EQUIVALENT CIRCUIT COLLECTOR BASE ∼ −4kΩ ∼ −800Ω D EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time ICBO IEBO ) TEST CONDITION VCB=80V, IE=0 VEB=8V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A(Pulse) IC=1A, IB=1mA(Pulse) IC=1A, IB=1mA(Pulse) VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz OUTPUT 20µs IB1 INPUT IB2 I B1 30Ω I B2 SYMBOL MIN. 100 2000 - TYP. 100 20 0.4 4.0 0.6 MAX. 10 4 1.5 2.0 - UNIT A mA V V(BR)CEO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf V V MHz pF S IB1=-I B2 =1mA DUTY CYCLE < 1% = VCC =30V 2001. 10. 23 Revision No : 0 1/3 KTD2854 I C - VCE 4 COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 3mA h FE - I C 10K 700µA 3 2mA 1mA 3K 1K 300 100 30 2 500µA 400µA 300µA C 0 10 a= 25 C T= Ta C 55 =Ta A IB=200µ 1 COMMON EMITTER Ta=25 C 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) 10 10m COMMON EMITTER VCE =2V 30m 100m 300m 1 3 10 COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 3 IC /I B =1000 V BE(sat) - I C 5 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) COMMON EMITTER IC /I B =1000 COMMON EMITTER 3 1 Ta=25 C Ta=-5 5C Ta=1 00 C Ta=-55 C Ta=25 C C Ta=100 0.5 0.2 0.3 0.5 1 3 5 1 200m 300m 500m 1 3 5 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - V BE COLLECTOR CURRENT I C (A) COMMON EMITTER VCE =2V Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 2.4 3.2 1200 1000 800 600 400 200 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta ( C) 3 2 C Ta= 100 5C 1 0 0 0.8 1.6 BASE-EMITTER VOLTAGE V BE (V) 2001. 10. 23 Revision No : 0 Ta=-55 Ta=2 C 2/3 KTD2854 SAFE OPERATING AREA 5 3 COLLECTOR CURRENT I C (A) I C MAX(PULSED) µs 100 s 1m 10m 1 0.5 0.3 s 0.1 0.05 0.03 0.3 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2001. 10. 23 Revision No : 0 VCEO (MAX) SINGLE NONREPETITIVE PULSE Tc=25 C 3/3