KTD545

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS B KTD545 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES : VCE(sat)=0.3V(Max.) at IC=0.5A. Complementary to KTB598. K D E G N A Low Saturation Voltage MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 30 25 5 1 625 150 -55 150 UNIT F H F V L V V A mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70 140, Y:120 ICBO IEBO ) TEST CONDITION VCB=20V, IE=0 VEB=5V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=1A(Pulse) IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz GR:200 400 MIN. 70 30 TYP. 0.1 0.85 180 15 MAX. 0.1 0.1 400 0.3 1.2 V V MHz pF UNIT A A SYMBOL hFE(1) (Note) hFE(2) VCE(sat) VBE(sat) fT Cob 240, 1999. 8. 7 Revision No : 1 1/2 KTD545 I C - VCE 800 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) IB = 50m I C - VCE 1000 A IB =30mA IB =20mA IB =15mA IB =10mA IB =8mA IB =5mA IB =3mA I B =10mA I B =8mA I B =6mA I B =4mA 600 800 600 400 200 0 0 400 I B =2mA 200 I B =1mA I B =0mA I B =1mA I B =0mA 0 0 1 2 3 4 5 6 7 8 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE V CE (V) I C - VBE COLLECTOR-EMITTER SATURATION VOLTAGE VCE (V) 1.4 COLLECTOR CURRENT I C (A) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE-EMITTER VOLTAGE VBE (V) 2.0 1.0 0.5 0.3 0.1 0.05 0.03 0.01 10 VCE =2V I C /I B=10 VCE(sat) - I C 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 2K 1K 500 300 100 50 30 10 1 3 10 30 100 300 1k COLLECTOR CURRENT I C (mA) VCE =10V hFE - I C 500 300 DC CURRENT GAIN h FE 100 50 30 10 5 3 1 1 3 10 30 100 300 1k 3k 10k COLLECTOR CURRENT I C (mA) VCE =2V 1999. 8. 7 Revision No : 1 2/2